Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes

The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied. We fabricated the PIN rectifier diodes with different initial oxygen concentrations, and analyzed the electrical properties, anisotropic preferred etching by means of optical microscopy,...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of Wuhan University of Technology. Materials science edition 2021-08, Vol.36 (4), p.472-477
Hauptverfasser:	Sun, Xinli, Guo, Hui, Zhang, Yuming, Guo, Bingjian, Li, Xingpeng, Cao, Zhen
Format:	Artikel
Sprache:	eng
Schlagworte:	Advanced Materials Chemistry and Materials Science Diodes Electrical properties Fourier transforms High temperature Leakage current Materials Science Microscopy Nucleation Optical microscopy Optical properties Oxidation Oxygen Rectifiers Stacking faults
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!