Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes
The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied. We fabricated the PIN rectifier diodes with different initial oxygen concentrations, and analyzed the electrical properties, anisotropic preferred etching by means of optical microscopy,...
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| Veröffentlicht in: | Journal of Wuhan University of Technology. Materials science edition 2021-08, Vol.36 (4), p.472-477 |
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| container_issue | 4 |
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| container_title | Journal of Wuhan University of Technology. Materials science edition |
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| creator | Sun, Xinli Guo, Hui Zhang, Yuming Guo, Bingjian Li, Xingpeng Cao, Zhen |
| description | The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied. We fabricated the PIN rectifier diodes with different initial oxygen concentrations, and analyzed the electrical properties, anisotropic preferred etching by means of optical microscopy, Fourier transform infrared spectroscopy and transmission electron microscopy. It is pointed out that the reverse leakage current increases exponentially with the increasing initial oxygen concentration. Furtherly, we researched and analyzed the mechanism of the effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diode. It is shown that the oxygen precipitations present in an “S” curve with increasing initial oxygen concentration after high temperature diffusion. The main reason is that the nucleation and growth of oxygen precipitation at high temperature induce bulk oxidation-induced defects (B-OSF), which are mainly dislocations, and a small amount of rod stacking faults. The density of B-OSF increases with the increasing initial oxygen concentration. The existence of B-OSF has great effects on the reverse leakage current of PIN rectifier diode. |
| doi_str_mv | 10.1007/s11595-021-2432-8 |
| format | Article |
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We fabricated the PIN rectifier diodes with different initial oxygen concentrations, and analyzed the electrical properties, anisotropic preferred etching by means of optical microscopy, Fourier transform infrared spectroscopy and transmission electron microscopy. It is pointed out that the reverse leakage current increases exponentially with the increasing initial oxygen concentration. Furtherly, we researched and analyzed the mechanism of the effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diode. It is shown that the oxygen precipitations present in an “S” curve with increasing initial oxygen concentration after high temperature diffusion. The main reason is that the nucleation and growth of oxygen precipitation at high temperature induce bulk oxidation-induced defects (B-OSF), which are mainly dislocations, and a small amount of rod stacking faults. The density of B-OSF increases with the increasing initial oxygen concentration. The existence of B-OSF has great effects on the reverse leakage current of PIN rectifier diode.</description><identifier>ISSN: 1000-2413</identifier><identifier>EISSN: 1993-0437</identifier><identifier>DOI: 10.1007/s11595-021-2432-8</identifier><language>eng</language><publisher>Wuhan: Wuhan University of Technology</publisher><subject>Advanced Materials ; Chemistry and Materials Science ; Diodes ; Electrical properties ; Fourier transforms ; High temperature ; Leakage current ; Materials Science ; Microscopy ; Nucleation ; Optical microscopy ; Optical properties ; Oxidation ; Oxygen ; Rectifiers ; Stacking faults</subject><ispartof>Journal of Wuhan University of Technology. Materials science edition, 2021-08, Vol.36 (4), p.472-477</ispartof><rights>Wuhan University of Technology and Springer-Verlag GmbH Germany, Part of Springer Nature 2021</rights><rights>Wuhan University of Technology and Springer-Verlag GmbH Germany, Part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c268t-cc29e410fd61353f93ae246a754566d631fd632596b210ffaa29478c0125b65a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11595-021-2432-8$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11595-021-2432-8$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Sun, Xinli</creatorcontrib><creatorcontrib>Guo, Hui</creatorcontrib><creatorcontrib>Zhang, Yuming</creatorcontrib><creatorcontrib>Guo, Bingjian</creatorcontrib><creatorcontrib>Li, Xingpeng</creatorcontrib><creatorcontrib>Cao, Zhen</creatorcontrib><title>Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes</title><title>Journal of Wuhan University of Technology. Materials science edition</title><addtitle>J. Wuhan Univ. Technol.-Mat. Sci. Edit</addtitle><description>The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied. We fabricated the PIN rectifier diodes with different initial oxygen concentrations, and analyzed the electrical properties, anisotropic preferred etching by means of optical microscopy, Fourier transform infrared spectroscopy and transmission electron microscopy. It is pointed out that the reverse leakage current increases exponentially with the increasing initial oxygen concentration. Furtherly, we researched and analyzed the mechanism of the effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diode. It is shown that the oxygen precipitations present in an “S” curve with increasing initial oxygen concentration after high temperature diffusion. The main reason is that the nucleation and growth of oxygen precipitation at high temperature induce bulk oxidation-induced defects (B-OSF), which are mainly dislocations, and a small amount of rod stacking faults. The density of B-OSF increases with the increasing initial oxygen concentration. The existence of B-OSF has great effects on the reverse leakage current of PIN rectifier diode.</description><subject>Advanced Materials</subject><subject>Chemistry and Materials Science</subject><subject>Diodes</subject><subject>Electrical properties</subject><subject>Fourier transforms</subject><subject>High temperature</subject><subject>Leakage current</subject><subject>Materials Science</subject><subject>Microscopy</subject><subject>Nucleation</subject><subject>Optical microscopy</subject><subject>Optical properties</subject><subject>Oxidation</subject><subject>Oxygen</subject><subject>Rectifiers</subject><subject>Stacking faults</subject><issn>1000-2413</issn><issn>1993-0437</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kFtLAzEQhYMoWKs_wLeAz6u5bLK7j7LeCtWKl-eQppOSuk1qshX7701ZwSdhYAa-c87AQeickktKSHWVKBWNKAijBSs5K-oDNKJNwwtS8uow34SQTCg_RicprQgpCZdyhNa31oLpEw4Wz753S_C4Dd6A76PuXfDYefwYfDBxl3rddc4DfnWdMxnleYEviAnwFPSHXgJutzFm7z7tefKUsemddRDxjQsLSKfoyOouwdnvHqP3u9u39qGYzu4n7fW0MEzWfWEMa6CkxC4k5YLbhmtgpdSVKIWUC8lpJpyJRs5ZVlmtWVNWtSGUibkUmo_RxZC7ieFzC6lXq7CNPr9ULCcQURIms4oOKhNDShGs2kS31nGnKFH7VtXQqsqtqn2rqs4eNnhS1volxL_k_00_dK15oQ</recordid><startdate>20210801</startdate><enddate>20210801</enddate><creator>Sun, Xinli</creator><creator>Guo, Hui</creator><creator>Zhang, Yuming</creator><creator>Guo, Bingjian</creator><creator>Li, Xingpeng</creator><creator>Cao, Zhen</creator><general>Wuhan University of Technology</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20210801</creationdate><title>Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes</title><author>Sun, Xinli ; Guo, Hui ; Zhang, Yuming ; Guo, Bingjian ; Li, Xingpeng ; Cao, Zhen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c268t-cc29e410fd61353f93ae246a754566d631fd632596b210ffaa29478c0125b65a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Advanced Materials</topic><topic>Chemistry and Materials Science</topic><topic>Diodes</topic><topic>Electrical properties</topic><topic>Fourier transforms</topic><topic>High temperature</topic><topic>Leakage current</topic><topic>Materials Science</topic><topic>Microscopy</topic><topic>Nucleation</topic><topic>Optical microscopy</topic><topic>Optical properties</topic><topic>Oxidation</topic><topic>Oxygen</topic><topic>Rectifiers</topic><topic>Stacking faults</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sun, Xinli</creatorcontrib><creatorcontrib>Guo, Hui</creatorcontrib><creatorcontrib>Zhang, Yuming</creatorcontrib><creatorcontrib>Guo, Bingjian</creatorcontrib><creatorcontrib>Li, Xingpeng</creatorcontrib><creatorcontrib>Cao, Zhen</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of Wuhan University of Technology. Materials science edition</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sun, Xinli</au><au>Guo, Hui</au><au>Zhang, Yuming</au><au>Guo, Bingjian</au><au>Li, Xingpeng</au><au>Cao, Zhen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes</atitle><jtitle>Journal of Wuhan University of Technology. Materials science edition</jtitle><stitle>J. Wuhan Univ. Technol.-Mat. Sci. Edit</stitle><date>2021-08-01</date><risdate>2021</risdate><volume>36</volume><issue>4</issue><spage>472</spage><epage>477</epage><pages>472-477</pages><issn>1000-2413</issn><eissn>1993-0437</eissn><abstract>The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied. We fabricated the PIN rectifier diodes with different initial oxygen concentrations, and analyzed the electrical properties, anisotropic preferred etching by means of optical microscopy, Fourier transform infrared spectroscopy and transmission electron microscopy. It is pointed out that the reverse leakage current increases exponentially with the increasing initial oxygen concentration. Furtherly, we researched and analyzed the mechanism of the effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diode. It is shown that the oxygen precipitations present in an “S” curve with increasing initial oxygen concentration after high temperature diffusion. The main reason is that the nucleation and growth of oxygen precipitation at high temperature induce bulk oxidation-induced defects (B-OSF), which are mainly dislocations, and a small amount of rod stacking faults. The density of B-OSF increases with the increasing initial oxygen concentration. The existence of B-OSF has great effects on the reverse leakage current of PIN rectifier diode.</abstract><cop>Wuhan</cop><pub>Wuhan University of Technology</pub><doi>10.1007/s11595-021-2432-8</doi><tpages>6</tpages></addata></record> |
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| subjects | Advanced Materials Chemistry and Materials Science Diodes Electrical properties Fourier transforms High temperature Leakage current Materials Science Microscopy Nucleation Optical microscopy Optical properties Oxidation Oxygen Rectifiers Stacking faults |
| title | Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes |
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