Improvement of Ge MOS Electrical and Interfacial Characteristics by using NdAlON as Interfacial Passivation Layer

The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO 2 as gate dielectric. AlON, NdON, and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer (IPL). The electrical properties (such as capacitance-voltage ( C-V ) and gate...

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