Theoretical model for spatial separation of dominating recombination region in a-Si:H/c-Si structures

In this paper we describe a theoretical model for spatial quantitative separation and determination of dominating recombination region in structures with amorphous/crystalline silicon heterojunction. This model is based on analysis of ideality factor, experimentally obtained from open circuit voltage dependence of generation rate; characteristic energy, corresponding to the maximum possible quasi Fermi level separation, experimentally obtained from temperature dependence of open circuit voltage. Compared to the existing approaches in this work we consider recombination in the bulk of amorphous silicon.