Structural and electronic properties of MgGe x Sn(1-x)N2 semiconductors: The density functional theory investigation

In this work, we studied the lattice dynamics and electronic structures of nitride semiconductors MgGe x Sn(1-x)N2, where x = 0, 0.25, 0.5, 0.75 and 1, using density functional theory (DFT) calculations. The core electronic states were represented via ultrasoft pseudo-potentials. From the results, l...

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Veröffentlicht in:	Journal of physics. Conference series 2018-12, Vol.1144 (1)
Hauptverfasser:	Kanchiang, K, Cheiwchanchamnangij, T, Laosiritaworn, Y, Pramchu, S, Jaroenjittichai, A P
Format:	Artikel
Sprache:	eng
Schlagworte:	Bowing Conduction bands Density functional theory Dynamic structural analysis Electron states Electronic properties Energy gap Germanium Lattice parameters Semiconductors Tin Valence band
Online-Zugang:	Volltext
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