Improved piezoresistive properties of ZnO/SiC nanowire heterojunctions with an optimized piezoelectric nanolayer

The vital issue for semiconductor pressure sensors is how to improve the sensitivity of their piezoresistive behavior. In this work, aiming to substantially promote the sensitivity, ZnO/SiC nanowire heterojunctions with various ZnO piezoelectric shell thicknesses were constructed by adjusting the de...

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Veröffentlicht in:	Journal of materials science 2021-10, Vol.56 (30), p.17146-17155
Hauptverfasser:	Wang, Lin, Wu, Jie, Shang, Minghui, Gao, Fengmei, Li, Xiaoxiao, Zheng, Yapeng, Zhang, Dongdong, Yang, Weiyou, Chen, Shanliang
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Atomic layer epitaxy Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Crystallography and Scattering Methods Electronic Materials Heterojunctions Materials Science Nanomaterials Nanowires Photovoltaic cells Piezoelectricity Polymer Sciences Pressure sensors Sensitivity Sensors Silicon carbide Solid Mechanics Thickness Zinc oxide
Online-Zugang:	Volltext
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