Technology and characteristics of the transistor with a channel based on graphene

In this article we have studied the current-voltage characteristics of the graphene- based transistor. The test structure of graphene transistor was fabricated with the back gate. Graphene has been produced by chemical vapor deposition, and then transferred to the silicon dioxide on a silicon wafer....

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IOP conference series. Materials Science and Engineering 2016-10, Vol.151 (1), p.12015
Hauptverfasser:	Shostachenko, S A, Zebrev, G I, Zakharchenko, R V, Leshchev, S V, Komissarov, I V
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Current voltage characteristics Graphene Oxidation Oxygen plasma Photolithography Semiconductor devices Silica Silicon dioxide Silicon substrates Silicon wafers Titanium Transistors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!