25.4: Contact Model Analysis of GaN‐based Micro Light Emitting Diodes (Micro‐LEDs) With Distinct Structures and Bonding Pads

In this paper, the contact model analysis based on gold (Au) and aluminum (Al) with distinct structures and bonding pads of GaN‐based Micro‐LED was proposed. Firstly, the fabrication process and three different structures (testing, bottom emitting and top emitting structures) with 30–200 µm size wer...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2021-08, Vol.52 (S2), p.339-343
Hauptverfasser:	Liu, Yibo, Zhang, Ke, Feng, Feng, Chan, Ka-Wah, Liu, Zhaojun, Kwok, Hoi Sing
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Bias Bonding Electric contacts Electrical properties Gallium nitrides GaN-based Micro-LEDs gold and aluminum contact Injection current Leakage current Light emitting diodes luminous flux radiometric power
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