Impedance and admittance characteristics of Bi2S3 nanowire arrays

Impedance and admittance characteristics of Bi2S3 nanowire arrays

Current studies of the electrical impedance and admittance characteristics of the anodised aluminum oxide (AAO) nanoporous arrays and bismuth sulphide (Bi2S3) nanowire within AAO membranes are presented. The influence of potential and frequency scan rate effect produced on the real, imaginary and co...

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Bibliographische Detailangaben
Hauptverfasser: Katkevics, J, Kunakova, G, Viksna, A, Holmes, J D, Erts, D
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum oxide
Arrays
Bismuth sulfides
Electrical impedance
Nanowires
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Beschreibung
Zusammenfassung:Current studies of the electrical impedance and admittance characteristics of the anodised aluminum oxide (AAO) nanoporous arrays and bismuth sulphide (Bi2S3) nanowire within AAO membranes are presented. The influence of potential and frequency scan rate effect produced on the real, imaginary and complex electrochemical impedance and double layer capacitance of the AAO nanopore and the Bi2S3 nanowire arrays were studied.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/49/1/012007