Highly efficient diamond electromechanical transducer based on released metal–oxide–semiconductor structure
We propose and demonstrate an efficient, integrated, and customizable metal–oxide–semiconductor (MOS) actuator capable of active on-chip driving and tuning microelectromechanical resonators. A single-crystal diamond mechanical resonator with a hydrogen-terminated surface was utilized for demonstrati...
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Veröffentlicht in: | Applied physics letters 2021-08, Vol.119 (7) |
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creator | Liao, Meiyong Sang, Liwen Sun, Huanying Li, Tiefu Koizumi, Satoshi |
description | We propose and demonstrate an efficient, integrated, and customizable metal–oxide–semiconductor (MOS) actuator capable of active on-chip driving and tuning microelectromechanical resonators. A single-crystal diamond mechanical resonator with a hydrogen-terminated surface was utilized for demonstration. In this actuator, the electrical field applied to the gate tunes the width of the depletion region of the MOS capacitor on the cantilever and induces an actuation force. The proposed actuator overcomes the drawbacks of conventional actuators, such as the growth of piezoelectric materials, formation of p–n junctions, high dc voltages, and nanoscale air gaps. The actuator has various merits, such as low-power dissipation (∼pW), low-voltage operation (∼mV), and a tailored amplitude through a low dc bias of less than 1 V. The proposed actuator is universally applicable in all semiconductors compatible with complementary metal–oxide–semiconductor. |
doi_str_mv | 10.1063/5.0058646 |
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A single-crystal diamond mechanical resonator with a hydrogen-terminated surface was utilized for demonstration. In this actuator, the electrical field applied to the gate tunes the width of the depletion region of the MOS capacitor on the cantilever and induces an actuation force. The proposed actuator overcomes the drawbacks of conventional actuators, such as the growth of piezoelectric materials, formation of p–n junctions, high dc voltages, and nanoscale air gaps. The actuator has various merits, such as low-power dissipation (∼pW), low-voltage operation (∼mV), and a tailored amplitude through a low dc bias of less than 1 V. The proposed actuator is universally applicable in all semiconductors compatible with complementary metal–oxide–semiconductor.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0058646</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Actuation ; Actuators ; Air gaps ; Applied physics ; Depletion ; Diamonds ; Electrical junctions ; Metal oxide semiconductors ; P-n junctions ; Piezoelectricity ; Resonators ; Single crystals</subject><ispartof>Applied physics letters, 2021-08, Vol.119 (7)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). 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The proposed actuator is universally applicable in all semiconductors compatible with complementary metal–oxide–semiconductor.</description><subject>Actuation</subject><subject>Actuators</subject><subject>Air gaps</subject><subject>Applied physics</subject><subject>Depletion</subject><subject>Diamonds</subject><subject>Electrical junctions</subject><subject>Metal oxide semiconductors</subject><subject>P-n junctions</subject><subject>Piezoelectricity</subject><subject>Resonators</subject><subject>Single crystals</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp90M1KAzEQB_AgCtbqwTdY8KSwNdlssrtHKWqFghc9h3SS2JTdTU2yYm--g2_okxht0YPgaT748R8YhE4JnhDM6SWbYMxqXvI9NCK4qnJKSL2PRhhjmvOGkUN0FMIqjaygdITczD4t202mjbFgdR8zZWXnepXpVkP0rtOwlL0F2WbRyz6oAbTPFjJolbk-84l9952Osv14e3evVulUg-4spJwBovNZiD41g9fH6MDINuiTXR2jx5vrh-ksn9_f3k2v5jnQhsaccV4VEtSiKmsoCgNNoYiRhisJTDbcMLpQNdQVhaYmJa-glsVCGSgrk1acjtHZNnft3fOgQxQrN_g-nRQF40XDeUPLpM63CrwLwWsj1t520m8EweLrn4KJ3T-TvdjaADbKaF3_g1-c_4Vircx_-G_yJ3gdiN0</recordid><startdate>20210816</startdate><enddate>20210816</enddate><creator>Liao, Meiyong</creator><creator>Sang, Liwen</creator><creator>Sun, Huanying</creator><creator>Li, Tiefu</creator><creator>Koizumi, Satoshi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1361-4266</orcidid><orcidid>https://orcid.org/0000-0003-0946-1025</orcidid></search><sort><creationdate>20210816</creationdate><title>Highly efficient diamond electromechanical transducer based on released metal–oxide–semiconductor structure</title><author>Liao, Meiyong ; Sang, Liwen ; Sun, Huanying ; Li, Tiefu ; Koizumi, Satoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-56672acdb748c22fc92d1faf6dac5a96f53bd8c873c981467c8a2bdfc47f3c963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Actuation</topic><topic>Actuators</topic><topic>Air gaps</topic><topic>Applied physics</topic><topic>Depletion</topic><topic>Diamonds</topic><topic>Electrical junctions</topic><topic>Metal oxide semiconductors</topic><topic>P-n junctions</topic><topic>Piezoelectricity</topic><topic>Resonators</topic><topic>Single crystals</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liao, Meiyong</creatorcontrib><creatorcontrib>Sang, Liwen</creatorcontrib><creatorcontrib>Sun, Huanying</creatorcontrib><creatorcontrib>Li, Tiefu</creatorcontrib><creatorcontrib>Koizumi, Satoshi</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liao, Meiyong</au><au>Sang, Liwen</au><au>Sun, Huanying</au><au>Li, Tiefu</au><au>Koizumi, Satoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly efficient diamond electromechanical transducer based on released metal–oxide–semiconductor structure</atitle><jtitle>Applied physics letters</jtitle><date>2021-08-16</date><risdate>2021</risdate><volume>119</volume><issue>7</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We propose and demonstrate an efficient, integrated, and customizable metal–oxide–semiconductor (MOS) actuator capable of active on-chip driving and tuning microelectromechanical resonators. A single-crystal diamond mechanical resonator with a hydrogen-terminated surface was utilized for demonstration. In this actuator, the electrical field applied to the gate tunes the width of the depletion region of the MOS capacitor on the cantilever and induces an actuation force. The proposed actuator overcomes the drawbacks of conventional actuators, such as the growth of piezoelectric materials, formation of p–n junctions, high dc voltages, and nanoscale air gaps. The actuator has various merits, such as low-power dissipation (∼pW), low-voltage operation (∼mV), and a tailored amplitude through a low dc bias of less than 1 V. 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subjects | Actuation Actuators Air gaps Applied physics Depletion Diamonds Electrical junctions Metal oxide semiconductors P-n junctions Piezoelectricity Resonators Single crystals |
title | Highly efficient diamond electromechanical transducer based on released metal–oxide–semiconductor structure |
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