Effect of the Si Doping Content in HfO2 Film on the Key Performance Metrics of Ferroelectric FETs

Doping of HfO 2 thin films is a powerful means for stabilizing ferroelectricity in this material. Yet, the amount of doping is critical to achieving the best ferroelectric response. This article investigates the impact of the Si doping content on the key performance metrics of ferroelectric field-ef...

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Veröffentlicht in:	IEEE transactions on electron devices 2021-09, Vol.68 (9), p.4773-4779
Hauptverfasser:	Mulaosmanovic, Halid, Dunkel, Stefan, Kleimaier, Dominik, Kacimi, Amine el, Beyer, Sven, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan
Format:	Artikel
Sprache:	eng
Schlagworte:	Assessments Business metrics Dopant Doping FeFETs ferroelectric field-effect transistor (FeFET) Ferroelectric materials Ferroelectricity Field effect transistors Hafnium oxide Iron Logic gates memory window (MW) Performance measurement retention Semiconductor devices Silicon Slopes Switches Thin films
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