Effect of the Si Doping Content in HfO2 Film on the Key Performance Metrics of Ferroelectric FETs
Doping of HfO 2 thin films is a powerful means for stabilizing ferroelectricity in this material. Yet, the amount of doping is critical to achieving the best ferroelectric response. This article investigates the impact of the Si doping content on the key performance metrics of ferroelectric field-ef...
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| Veröffentlicht in: | IEEE transactions on electron devices 2021-09, Vol.68 (9), p.4773-4779 |
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| container_title | IEEE transactions on electron devices |
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| creator | Mulaosmanovic, Halid Dunkel, Stefan Kleimaier, Dominik Kacimi, Amine el Beyer, Sven Breyer, Evelyn T. Mikolajick, Thomas Slesazeck, Stefan |
| description | Doping of HfO 2 thin films is a powerful means for stabilizing ferroelectricity in this material. Yet, the amount of doping is critical to achieving the best ferroelectric response. This article investigates the impact of the Si doping content on the key performance metrics of ferroelectric field-effect transistors (FeFETs). We report on its considerable effect on the memory window, switching uniformity and steepness, number of intermediate conductance states, and data retention. Based on the experimental results, we introduce simple figures of merit for a rapid assessment of the FeFET performance. Finally, we identify an important tradeoff between the abovementioned properties as a function of the dopant content and discuss possibilities for specialized device design for nonvolatile memory applications and potential neuromorphic devices based on FeFETs. |
| doi_str_mv | 10.1109/TED.2021.3100005 |
| format | Article |
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Yet, the amount of doping is critical to achieving the best ferroelectric response. This article investigates the impact of the Si doping content on the key performance metrics of ferroelectric field-effect transistors (FeFETs). We report on its considerable effect on the memory window, switching uniformity and steepness, number of intermediate conductance states, and data retention. Based on the experimental results, we introduce simple figures of merit for a rapid assessment of the FeFET performance. 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Yet, the amount of doping is critical to achieving the best ferroelectric response. This article investigates the impact of the Si doping content on the key performance metrics of ferroelectric field-effect transistors (FeFETs). We report on its considerable effect on the memory window, switching uniformity and steepness, number of intermediate conductance states, and data retention. Based on the experimental results, we introduce simple figures of merit for a rapid assessment of the FeFET performance. 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Yet, the amount of doping is critical to achieving the best ferroelectric response. This article investigates the impact of the Si doping content on the key performance metrics of ferroelectric field-effect transistors (FeFETs). We report on its considerable effect on the memory window, switching uniformity and steepness, number of intermediate conductance states, and data retention. Based on the experimental results, we introduce simple figures of merit for a rapid assessment of the FeFET performance. 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| subjects | Assessments Business metrics Dopant Doping FeFETs ferroelectric field-effect transistor (FeFET) Ferroelectric materials Ferroelectricity Field effect transistors Hafnium oxide Iron Logic gates memory window (MW) Performance measurement retention Semiconductor devices Silicon Slopes Switches Thin films |
| title | Effect of the Si Doping Content in HfO2 Film on the Key Performance Metrics of Ferroelectric FETs |
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