Performance and Reliability Optimization of Supercritical-Nitridation-Treated AlGaN/GaN High-Electron-Mobility Transistors

According to previous research, supercritical fluid nitridation (SCFN) treatment yields only a limited improvement in AlGaN/GaN high-electron-mobility transistors due to the additional water molecules generated during the SCFN treatment, which reacts with dangling bonds of AlGaN/GaN causing undesira...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2021-09, Vol.68 (9), p.4317-4321
Hauptverfasser:	Wu, Pei-Yu, Chang, Ting-Chang, Chen, Ming-Chen, Zheng, Hao-Xuan, Lin, Yu-Shan, Tsai, Xin-Ying, Chang, Kuo-Jen, Kuo, Wei-Cheng, Lin, Chao-Wei, Liu, Guan-Shian, Tsai, Tsung-Ming
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Aluminum gallium nitrides Annealing (ANL) Current leakage Defects Electrical properties Gallium nitrides HEMTs high electron mobility transistor (HEMT) High electron mobility transistors MODFETs nitridation Optimization Oxidation Performance evaluation Reliability Reliability analysis Semiconductor devices Stress supercritical fluid Supercritical fluids Transistors Water chemistry Wide band gap semiconductors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!