Specific surface defects arising from diamond CVD-synthesis from methane-hydrogen plasma
Diamond is unique material that have long been known to humanity. It has extra high hardness, thermal conductivity, as well as unique electrophysical characteristics that can be managed by changing its impurity composition. Therefore, this material has gained the potential of widespread use in engin...
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| Veröffentlicht in: | IOP conference series. Materials Science and Engineering 2020-09, Vol.919 (2), p.22054 |
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| creator | Martynova, T V Polushin, N I Laptev, A I Zakharova, E S Maslov, A L |
| description | Diamond is unique material that have long been known to humanity. It has extra high hardness, thermal conductivity, as well as unique electrophysical characteristics that can be managed by changing its impurity composition. Therefore, this material has gained the potential of widespread use in engineering, which is currently complicated by the high cost of diamonds, difficulties of its synthesis, mechanical and physical processing. A promising direction for obtaining high-quality poly- and single crystals and, accordingly, expanding the areas of diamond use is the method of its deposition from the gas phase (CVD). The main problem that researchers face during deposition the diamond is the formation of surface defects in the growth zone. In this work, we discuss defects observed on single-crystal diamond CVD-films of 300-500 μm thick obtained from methane-hydrogen plasma with 3% methane. The surface was studied by scanning electron microscopy. As a result of the work, we revealed that during the diamond films CVD-growth mainly three types of defects are formed: etch pits, isolated diamond particles ("straying" diamonds) and coarse-grained diamond formed along the diamond plates periphery. Methods for eliminating these defects are proposed. |
| doi_str_mv | 10.1088/1757-899X/919/2/022054 |
| format | Article |
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It has extra high hardness, thermal conductivity, as well as unique electrophysical characteristics that can be managed by changing its impurity composition. Therefore, this material has gained the potential of widespread use in engineering, which is currently complicated by the high cost of diamonds, difficulties of its synthesis, mechanical and physical processing. A promising direction for obtaining high-quality poly- and single crystals and, accordingly, expanding the areas of diamond use is the method of its deposition from the gas phase (CVD). The main problem that researchers face during deposition the diamond is the formation of surface defects in the growth zone. In this work, we discuss defects observed on single-crystal diamond CVD-films of 300-500 μm thick obtained from methane-hydrogen plasma with 3% methane. The surface was studied by scanning electron microscopy. As a result of the work, we revealed that during the diamond films CVD-growth mainly three types of defects are formed: etch pits, isolated diamond particles ("straying" diamonds) and coarse-grained diamond formed along the diamond plates periphery. Methods for eliminating these defects are proposed.</description><identifier>ISSN: 1757-8981</identifier><identifier>EISSN: 1757-899X</identifier><identifier>DOI: 10.1088/1757-899X/919/2/022054</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Chemical vapor deposition ; Crystal defects ; Diamond films ; Diamonds ; Etch pits ; Hydrogen plasma ; Methane ; Single crystals ; Surface defects ; Synthesis ; Thermal conductivity ; Thick films ; Vapor phases</subject><ispartof>IOP conference series. Materials Science and Engineering, 2020-09, Vol.919 (2), p.22054</ispartof><rights>Published under licence by IOP Publishing Ltd</rights><rights>2020. 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Materials Science and Engineering</title><addtitle>IOP Conf. Ser.: Mater. Sci. Eng</addtitle><description>Diamond is unique material that have long been known to humanity. It has extra high hardness, thermal conductivity, as well as unique electrophysical characteristics that can be managed by changing its impurity composition. Therefore, this material has gained the potential of widespread use in engineering, which is currently complicated by the high cost of diamonds, difficulties of its synthesis, mechanical and physical processing. A promising direction for obtaining high-quality poly- and single crystals and, accordingly, expanding the areas of diamond use is the method of its deposition from the gas phase (CVD). The main problem that researchers face during deposition the diamond is the formation of surface defects in the growth zone. In this work, we discuss defects observed on single-crystal diamond CVD-films of 300-500 μm thick obtained from methane-hydrogen plasma with 3% methane. The surface was studied by scanning electron microscopy. As a result of the work, we revealed that during the diamond films CVD-growth mainly three types of defects are formed: etch pits, isolated diamond particles ("straying" diamonds) and coarse-grained diamond formed along the diamond plates periphery. Methods for eliminating these defects are proposed.</description><subject>Chemical vapor deposition</subject><subject>Crystal defects</subject><subject>Diamond films</subject><subject>Diamonds</subject><subject>Etch pits</subject><subject>Hydrogen plasma</subject><subject>Methane</subject><subject>Single crystals</subject><subject>Surface defects</subject><subject>Synthesis</subject><subject>Thermal conductivity</subject><subject>Thick films</subject><subject>Vapor phases</subject><issn>1757-8981</issn><issn>1757-899X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqFkElLAzEUx4MoWKtfQQJevIyTxEyWo9S6QMVDVXoLaZY2pbOYTA_99s4wUhEET-_Bf3mPHwCXGN1gJESOecEzIeUil1jmJEeEoIIegdFBOD7sAp-Cs5Q2CDFOKRqBxbxxJvhgYNpFr42D1nln2gR1DClUK-hjXUIbdFlXFk4-7rO0r9q1SyENUunata5ctt7bWK9cBZutTqU-Bydeb5O7-J5j8P4wfZs8ZbPXx-fJ3SwzhNM2M5h64o2VhlKGJfeWGSksQoJxjjwyFGPtEDaSacGYMdhqhqwVzptlsfS3Y3A19Dax_ty51KpNvYtVd1KRghFeFFzizsUGl4l1StF51cRQ6rhXGKmeouoBqR6W6igqogaKXfB6CIa6-Wl-mU9_2VRj-0_IH9Z_-r8AHjmC7g</recordid><startdate>20200901</startdate><enddate>20200901</enddate><creator>Martynova, T V</creator><creator>Polushin, N I</creator><creator>Laptev, A I</creator><creator>Zakharova, E S</creator><creator>Maslov, A L</creator><general>IOP Publishing</general><scope>O3W</scope><scope>TSCCA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>20200901</creationdate><title>Specific surface defects arising from diamond CVD-synthesis from methane-hydrogen plasma</title><author>Martynova, T V ; Polushin, N I ; Laptev, A I ; Zakharova, E S ; Maslov, A L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c274t-c14f2fcd9c446197fd6c98d0086770f0c411ae01c96a866cc1da60dd8efcb5bf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Chemical vapor deposition</topic><topic>Crystal defects</topic><topic>Diamond films</topic><topic>Diamonds</topic><topic>Etch pits</topic><topic>Hydrogen plasma</topic><topic>Methane</topic><topic>Single crystals</topic><topic>Surface defects</topic><topic>Synthesis</topic><topic>Thermal conductivity</topic><topic>Thick films</topic><topic>Vapor phases</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Martynova, T V</creatorcontrib><creatorcontrib>Polushin, N I</creatorcontrib><creatorcontrib>Laptev, A I</creatorcontrib><creatorcontrib>Zakharova, E S</creatorcontrib><creatorcontrib>Maslov, A L</creatorcontrib><collection>IOP Publishing Free Content</collection><collection>IOPscience (Open Access)</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><jtitle>IOP conference series. 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Therefore, this material has gained the potential of widespread use in engineering, which is currently complicated by the high cost of diamonds, difficulties of its synthesis, mechanical and physical processing. A promising direction for obtaining high-quality poly- and single crystals and, accordingly, expanding the areas of diamond use is the method of its deposition from the gas phase (CVD). The main problem that researchers face during deposition the diamond is the formation of surface defects in the growth zone. In this work, we discuss defects observed on single-crystal diamond CVD-films of 300-500 μm thick obtained from methane-hydrogen plasma with 3% methane. The surface was studied by scanning electron microscopy. As a result of the work, we revealed that during the diamond films CVD-growth mainly three types of defects are formed: etch pits, isolated diamond particles ("straying" diamonds) and coarse-grained diamond formed along the diamond plates periphery. 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| subjects | Chemical vapor deposition Crystal defects Diamond films Diamonds Etch pits Hydrogen plasma Methane Single crystals Surface defects Synthesis Thermal conductivity Thick films Vapor phases |
| title | Specific surface defects arising from diamond CVD-synthesis from methane-hydrogen plasma |
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