FW‐EM‐based approach for scalable small‐signal modeling of GaN HEMT with consideration of temperature‐dependent resistances

In this paper, the full‐wave electromagnetic (FW‐EM) simulation approach for scalable small‐signal modeling of the GaN HEMT device is proposed. The scalable rules are deduced from the extracted parasitic parameters, which is according to a step‐by‐step parameter extraction method. Moreover, the accu...

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Veröffentlicht in:	International journal of numerical modelling 2021-08, Vol.34 (5), p.n/a
Hauptverfasser:	Tang, Xianli, Yang, Taojun, Jia, Yonghao, Xu, Yuehang
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN/GaN HEMTs FW‐EM Gallium nitrides High electron mobility transistors Mathematical models Modelling Parameters scalable model small‐signal model Temperature dependence Thermal resistance
Online-Zugang:	Volltext
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