FW‐EM‐based approach for scalable small‐signal modeling of GaN HEMT with consideration of temperature‐dependent resistances
In this paper, the full‐wave electromagnetic (FW‐EM) simulation approach for scalable small‐signal modeling of the GaN HEMT device is proposed. The scalable rules are deduced from the extracted parasitic parameters, which is according to a step‐by‐step parameter extraction method. Moreover, the accu...
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| Veröffentlicht in: | International journal of numerical modelling 2021-08, Vol.34 (5), p.n/a |
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| container_title | International journal of numerical modelling |
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| creator | Tang, Xianli Yang, Taojun Jia, Yonghao Xu, Yuehang |
| description | In this paper, the full‐wave electromagnetic (FW‐EM) simulation approach for scalable small‐signal modeling of the GaN HEMT device is proposed. The scalable rules are deduced from the extracted parasitic parameters, which is according to a step‐by‐step parameter extraction method. Moreover, the accuracy is enhanced by considering the temperature‐dependent resistance (TDR) Rs and Rd, which are calculated by combining a universal thermal resistance model and the Rs and Rd under the pinch‐off condition. In the end, a set of GaN HEMT with a gate length of 0.25 μm is used for validation, and the experimental results show that good agreements have been achieved between the measured and the simulated scattering (S) parameters. |
| doi_str_mv | 10.1002/jnm.2882 |
| format | Article |
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The scalable rules are deduced from the extracted parasitic parameters, which is according to a step‐by‐step parameter extraction method. Moreover, the accuracy is enhanced by considering the temperature‐dependent resistance (TDR) Rs and Rd, which are calculated by combining a universal thermal resistance model and the Rs and Rd under the pinch‐off condition. In the end, a set of GaN HEMT with a gate length of 0.25 μm is used for validation, and the experimental results show that good agreements have been achieved between the measured and the simulated scattering (S) parameters.</description><identifier>ISSN: 0894-3370</identifier><identifier>EISSN: 1099-1204</identifier><identifier>DOI: 10.1002/jnm.2882</identifier><language>eng</language><publisher>Chichester, UK: John Wiley & Sons, Inc</publisher><subject>AlGaN/GaN HEMTs ; FW‐EM ; Gallium nitrides ; High electron mobility transistors ; Mathematical models ; Modelling ; Parameters ; scalable model ; small‐signal model ; Temperature dependence ; Thermal resistance</subject><ispartof>International journal of numerical modelling, 2021-08, Vol.34 (5), p.n/a</ispartof><rights>2021 John Wiley & Sons Ltd.</rights><rights>2021 John Wiley & Sons, Ltd.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2932-8259976a184a33f94db78f223a12d58491322da47e1c89d995eff17a5599d1ba3</citedby><cites>FETCH-LOGICAL-c2932-8259976a184a33f94db78f223a12d58491322da47e1c89d995eff17a5599d1ba3</cites><orcidid>0000-0003-4887-2839 ; 0000-0002-9590-2888 ; 0000-0003-1706-2681</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fjnm.2882$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fjnm.2882$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27923,27924,45573,45574</link.rule.ids></links><search><creatorcontrib>Tang, Xianli</creatorcontrib><creatorcontrib>Yang, Taojun</creatorcontrib><creatorcontrib>Jia, Yonghao</creatorcontrib><creatorcontrib>Xu, Yuehang</creatorcontrib><title>FW‐EM‐based approach for scalable small‐signal modeling of GaN HEMT with consideration of temperature‐dependent resistances</title><title>International journal of numerical modelling</title><description>In this paper, the full‐wave electromagnetic (FW‐EM) simulation approach for scalable small‐signal modeling of the GaN HEMT device is proposed. The scalable rules are deduced from the extracted parasitic parameters, which is according to a step‐by‐step parameter extraction method. Moreover, the accuracy is enhanced by considering the temperature‐dependent resistance (TDR) Rs and Rd, which are calculated by combining a universal thermal resistance model and the Rs and Rd under the pinch‐off condition. In the end, a set of GaN HEMT with a gate length of 0.25 μm is used for validation, and the experimental results show that good agreements have been achieved between the measured and the simulated scattering (S) parameters.</description><subject>AlGaN/GaN HEMTs</subject><subject>FW‐EM</subject><subject>Gallium nitrides</subject><subject>High electron mobility transistors</subject><subject>Mathematical models</subject><subject>Modelling</subject><subject>Parameters</subject><subject>scalable model</subject><subject>small‐signal model</subject><subject>Temperature dependence</subject><subject>Thermal resistance</subject><issn>0894-3370</issn><issn>1099-1204</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kM1Kw0AUhQdRsFbBRxhw4yZ1fpJmZimlP0pbNxWX4TZz06bkz5mU0p3gC_iMPokT69bNvVzOdy6cQ8gtZwPOmHjYVeVAKCXOSI8zrQMuWHhOekzpMJAyZpfkyrkdY0zySPTI5-Tt--NrvPBjDQ4NhaaxNaRbmtWWuhQKWBdIXQlF4RmXbyooaFkbLPJqQ-uMTmFJZ-PFih7ydkvTunK5QQttXled3GLZdOfeovcbbLAyWLXUostdC1WK7ppcZFA4vPnbffI6Ga9Gs2D-Mn0aPc6DVGgpAiUireMhcBWClJkOzTpWmRASuDCRCjWXQhgIY-Sp0kbrCLOMxxB5m-FrkH1yd_rrE77v0bXJrt5bn8clIhoKFnPNlKfuT1Rqa-csZklj8xLsMeEs6SpOfMVJV7FHgxN6yAs8_sslz8vFL_8Dwv2BfA</recordid><startdate>20210801</startdate><enddate>20210801</enddate><creator>Tang, Xianli</creator><creator>Yang, Taojun</creator><creator>Jia, Yonghao</creator><creator>Xu, Yuehang</creator><general>John Wiley & Sons, Inc</general><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><orcidid>https://orcid.org/0000-0003-4887-2839</orcidid><orcidid>https://orcid.org/0000-0002-9590-2888</orcidid><orcidid>https://orcid.org/0000-0003-1706-2681</orcidid></search><sort><creationdate>20210801</creationdate><title>FW‐EM‐based approach for scalable small‐signal modeling of GaN HEMT with consideration of temperature‐dependent resistances</title><author>Tang, Xianli ; Yang, Taojun ; Jia, Yonghao ; Xu, Yuehang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2932-8259976a184a33f94db78f223a12d58491322da47e1c89d995eff17a5599d1ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>AlGaN/GaN HEMTs</topic><topic>FW‐EM</topic><topic>Gallium nitrides</topic><topic>High electron mobility transistors</topic><topic>Mathematical models</topic><topic>Modelling</topic><topic>Parameters</topic><topic>scalable model</topic><topic>small‐signal model</topic><topic>Temperature dependence</topic><topic>Thermal resistance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tang, Xianli</creatorcontrib><creatorcontrib>Yang, Taojun</creatorcontrib><creatorcontrib>Jia, Yonghao</creatorcontrib><creatorcontrib>Xu, Yuehang</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>International journal of numerical modelling</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tang, Xianli</au><au>Yang, Taojun</au><au>Jia, Yonghao</au><au>Xu, Yuehang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>FW‐EM‐based approach for scalable small‐signal modeling of GaN HEMT with consideration of temperature‐dependent resistances</atitle><jtitle>International journal of numerical modelling</jtitle><date>2021-08-01</date><risdate>2021</risdate><volume>34</volume><issue>5</issue><epage>n/a</epage><issn>0894-3370</issn><eissn>1099-1204</eissn><abstract>In this paper, the full‐wave electromagnetic (FW‐EM) simulation approach for scalable small‐signal modeling of the GaN HEMT device is proposed. The scalable rules are deduced from the extracted parasitic parameters, which is according to a step‐by‐step parameter extraction method. Moreover, the accuracy is enhanced by considering the temperature‐dependent resistance (TDR) Rs and Rd, which are calculated by combining a universal thermal resistance model and the Rs and Rd under the pinch‐off condition. In the end, a set of GaN HEMT with a gate length of 0.25 μm is used for validation, and the experimental results show that good agreements have been achieved between the measured and the simulated scattering (S) parameters.</abstract><cop>Chichester, UK</cop><pub>John Wiley & Sons, Inc</pub><doi>10.1002/jnm.2882</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0003-4887-2839</orcidid><orcidid>https://orcid.org/0000-0002-9590-2888</orcidid><orcidid>https://orcid.org/0000-0003-1706-2681</orcidid></addata></record> |
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| subjects | AlGaN/GaN HEMTs FW‐EM Gallium nitrides High electron mobility transistors Mathematical models Modelling Parameters scalable model small‐signal model Temperature dependence Thermal resistance |
| title | FW‐EM‐based approach for scalable small‐signal modeling of GaN HEMT with consideration of temperature‐dependent resistances |
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