Structural and thermoelectric properties of sintered silicon clathrates: Ba6Eu2Ga16Si30 nominal composition
We have prepared Ba8−xEuxGa16Si30 clathrate system by spark plasma sintering method at different temperatures 1093-1273 K using a starting material with Ga rich composition Ba6Eu2Ga17Si29. Powder x-ray diffraction (XRD), Rietveld structure refinement, FE-SEM and EPMA indicate that the Ga composition...
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| creator | Nakabayashi, T Hokazono, M Anno, H Y Ba Koumoto, K |
| description | We have prepared Ba8−xEuxGa16Si30 clathrate system by spark plasma sintering method at different temperatures 1093-1273 K using a starting material with Ga rich composition Ba6Eu2Ga17Si29. Powder x-ray diffraction (XRD), Rietveld structure refinement, FE-SEM and EPMA indicate that the Ga composition slightly increases with a decrease in sintering temperature, leading to a decrease in the carrier concentration. The Seebeck coefficient, the electrical conductivity, and the thermal conductivity vary with the sintering temperature according to the change in the carrier concentration. The thermoelectric figure of merit at 900 K increases from 0.28 to 0.35 by decreasing the sintering temperature from 1273 K to 1093 K. |
| doi_str_mv | 10.1088/1757-899X/18/14/142008 |
| format | Conference Proceeding |
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Powder x-ray diffraction (XRD), Rietveld structure refinement, FE-SEM and EPMA indicate that the Ga composition slightly increases with a decrease in sintering temperature, leading to a decrease in the carrier concentration. The Seebeck coefficient, the electrical conductivity, and the thermal conductivity vary with the sintering temperature according to the change in the carrier concentration. The thermoelectric figure of merit at 900 K increases from 0.28 to 0.35 by decreasing the sintering temperature from 1273 K to 1093 K.</description><identifier>ISSN: 1757-8981</identifier><identifier>EISSN: 1757-899X</identifier><identifier>DOI: 10.1088/1757-899X/18/14/142008</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Carrier density ; Clathrates ; Composition ; Electrical resistivity ; Figure of merit ; Plasma sintering ; Seebeck effect ; Sintering (powder metallurgy) ; Spark plasma sintering ; Temperature ; Thermal conductivity ; Thermoelectricity ; X ray powder diffraction</subject><ispartof>IOP conference series. 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The thermoelectric figure of merit at 900 K increases from 0.28 to 0.35 by decreasing the sintering temperature from 1273 K to 1093 K.</description><subject>Carrier density</subject><subject>Clathrates</subject><subject>Composition</subject><subject>Electrical resistivity</subject><subject>Figure of merit</subject><subject>Plasma sintering</subject><subject>Seebeck effect</subject><subject>Sintering (powder metallurgy)</subject><subject>Spark plasma sintering</subject><subject>Temperature</subject><subject>Thermal conductivity</subject><subject>Thermoelectricity</subject><subject>X ray powder diffraction</subject><issn>1757-8981</issn><issn>1757-899X</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNo9jk9LAzEUxIMoWKtfQQKe175ssvnjTUutQsFDe_BW0uxbmrrdrEn2-xtQhIE3j2F-DCH3DB4ZaL1gqlGVNuZzwcojimoAfUFm_8Hlv9fsmtykdAKQSgiYka9tjpPLU7Q9tUNL8xHjOWCPLkfv6BjDiDF7TDR0NPkhY8S2mN67MFDX23yMNmN6oi9WrqZ6bZnceg50CGc_FKgL5zEkn30YbslVZ_uEd393Tnavq93yrdp8rN-Xz5tqNDpXXBitpAQwVqJC6Zqu4UZIKYyoO7CurV1jVMcOIA-q5SVFyWWN3DBdunxOHn6xZfz3hCnvT2GKZUva141khQLa8B-oWlt8</recordid><startdate>20110501</startdate><enddate>20110501</enddate><creator>Nakabayashi, T</creator><creator>Hokazono, M</creator><creator>Anno, H</creator><creator>Y Ba</creator><creator>Koumoto, K</creator><general>IOP Publishing</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>20110501</creationdate><title>Structural and thermoelectric properties of sintered silicon clathrates: Ba6Eu2Ga16Si30 nominal composition</title><author>Nakabayashi, T ; Hokazono, M ; Anno, H ; Y Ba ; Koumoto, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p98t-3498766009a6e7e6c5f5394664942f0acd2c597f1b06b7d3f53e6362e39184983</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Carrier density</topic><topic>Clathrates</topic><topic>Composition</topic><topic>Electrical resistivity</topic><topic>Figure of merit</topic><topic>Plasma sintering</topic><topic>Seebeck effect</topic><topic>Sintering (powder metallurgy)</topic><topic>Spark plasma sintering</topic><topic>Temperature</topic><topic>Thermal conductivity</topic><topic>Thermoelectricity</topic><topic>X ray powder diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakabayashi, T</creatorcontrib><creatorcontrib>Hokazono, M</creatorcontrib><creatorcontrib>Anno, H</creatorcontrib><creatorcontrib>Y Ba</creatorcontrib><creatorcontrib>Koumoto, K</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakabayashi, T</au><au>Hokazono, M</au><au>Anno, H</au><au>Y Ba</au><au>Koumoto, K</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Structural and thermoelectric properties of sintered silicon clathrates: Ba6Eu2Ga16Si30 nominal composition</atitle><btitle>IOP conference series. Materials Science and Engineering</btitle><date>2011-05-01</date><risdate>2011</risdate><volume>18</volume><issue>14</issue><issn>1757-8981</issn><eissn>1757-899X</eissn><abstract>We have prepared Ba8−xEuxGa16Si30 clathrate system by spark plasma sintering method at different temperatures 1093-1273 K using a starting material with Ga rich composition Ba6Eu2Ga17Si29. Powder x-ray diffraction (XRD), Rietveld structure refinement, FE-SEM and EPMA indicate that the Ga composition slightly increases with a decrease in sintering temperature, leading to a decrease in the carrier concentration. The Seebeck coefficient, the electrical conductivity, and the thermal conductivity vary with the sintering temperature according to the change in the carrier concentration. The thermoelectric figure of merit at 900 K increases from 0.28 to 0.35 by decreasing the sintering temperature from 1273 K to 1093 K.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1757-899X/18/14/142008</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1757-8981 |
| ispartof | IOP conference series. Materials Science and Engineering, 2011, Vol.18 (14) |
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| language | eng |
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| source | IOP Publishing Free Content; Institute of Physics IOPscience extra; EZB-FREE-00999 freely available EZB journals; Free Full-Text Journals in Chemistry |
| subjects | Carrier density Clathrates Composition Electrical resistivity Figure of merit Plasma sintering Seebeck effect Sintering (powder metallurgy) Spark plasma sintering Temperature Thermal conductivity Thermoelectricity X ray powder diffraction |
| title | Structural and thermoelectric properties of sintered silicon clathrates: Ba6Eu2Ga16Si30 nominal composition |
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