Forming-free resistive switching in nanocrystalline hafnium oxide films

This work presents the results of the investigations of resistive switching effect in Si(100)/HfO2 structure. It was shown that resistive switching from HRS to LRS occurred at 0.4±0.1 V, and from LRS to HRS at -0.5±0.1 V. An increase in the sweep voltage from 1 to 5 V led to a decrease in the HRS/LR...

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Veröffentlicht in:	IOP conference series. Materials Science and Engineering 2019-12, Vol.699 (1), p.12053
Hauptverfasser:	Smirnov, V A, Tominov, R V, Avilov, V I, Avakyan, A A, Ageev, O A
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric potential Hafnium oxide Nanocrystals Oxide coatings Switching Voltage
Online-Zugang:	Volltext
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