Donor ionization tuning in AlGaAs/InGaAs/GaAs PHEMT quantum wells with AlAs nanolayers in spacer

Donor ionization tuning in AlGaAs/InGaAs/GaAs PHEMT quantum wells with AlAs nanolayers in spacer

A comparison of the electron transport properties of pseudomorphic quantum well AlxGa1-xAs/In0.2Ga0.8As/GaAs with those of conventional donor layer (x = 0.15 and x = 0.25) and with AlAs nanoinserts around the delta-Si layer or AlAs: delta-Si donor layer is presented. The structures with added AlAs l...

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Veröffentlicht in:IOP conference series. Materials Science and Engineering 2019-04, Vol.498 (1), p.12031
Hauptverfasser: Safonov, D A, Vinichenko, A N, Sibirmovsky, Yu D, Kargin, N I, Vasil'evskii, I S
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum arsenides
Electron mobility
Electron transport
Gallium arsenide
Indium gallium arsenides
Quantum wells
Silicon
Transport properties
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Zusammenfassung:A comparison of the electron transport properties of pseudomorphic quantum well AlxGa1-xAs/In0.2Ga0.8As/GaAs with those of conventional donor layer (x = 0.15 and x = 0.25) and with AlAs nanoinserts around the delta-Si layer or AlAs: delta-Si donor layer is presented. The structures with added AlAs layers exhibit electron concentration decrease, combined with increased electron mobility. This effect is related to the suppression of remote ionized impurity electron scattering, change of band structure and decreasing efficiency of silicon atoms doping when incorporating in pure AlAs.
ISSN:1757-8981
1757-899X
1757-899X
DOI:10.1088/1757-899X/498/1/012031