Improved UV photodetector performance of NiO films by substitutional incorporation of Li
[Display omitted] •We describe the lattice structure of substitutional Li+ in Ni2+ vacant site of NiO.•Possible mechanism of enhanced intrinsic p-type conductivity is projected.•The superior charge carrier generation is obtained through Li incorporation.•Achieve the higher photodetector performance...
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| Veröffentlicht in: | Materials letters 2021-10, Vol.301, p.130296, Article 130296 |
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| container_title | Materials letters |
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| creator | Yadav, P.V. Karthik Ajitha, B. Annapureddy, V. Reddy, Y. Ashok Kumar Sreedhar, Adem |
| description | [Display omitted]
•We describe the lattice structure of substitutional Li+ in Ni2+ vacant site of NiO.•Possible mechanism of enhanced intrinsic p-type conductivity is projected.•The superior charge carrier generation is obtained through Li incorporation.•Achieve the higher photodetector performance in Li0.2Ni0.8O sample.
In this study, NiO and Li0.2Ni0.8O (LNO) thin films are successfully deposited by sputtering technique. X-ray photoelectron spectroscopy (XPS) analysis revealed the existence of Ni vacancies. Here, we fabricated metal-semiconductor-metal (M-S-M) structure for exploring the ultra-violet (UV) photodetector (PD) performance. The impact of interstitial oxygen and substitutional incorporation of monovalent Li+ ion in Ni2+ sites of NiO on UV photodetector performance are explored. In a word, LNO exhibited superior responsivity (0.218 A/W) and detectivity (0.467 × 1012 Jones) even at lower power density of 0.31 mW/cm2. |
| doi_str_mv | 10.1016/j.matlet.2021.130296 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2560876614</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167577X21009939</els_id><sourcerecordid>2560876614</sourcerecordid><originalsourceid>FETCH-LOGICAL-c334t-e4cdb3dd08e87cfe1cdb1964a3ca8e39ecbaedd79efd2ebebee422aa838584933</originalsourceid><addsrcrecordid>eNp9kEtrwzAQhEVpoWnaf9CDoGe7kqX4cSmU0EcgNJem5CZkaU1l7MiV5ED-fWXcc9nDsjAz7HwI3VOSUkLzxzbtZeggpBnJaEoZyar8Ai1oWbCEV0V1iRZRViSrojhcoxvvW0IIrwhfoMOmH5w9gcb7Lzx822A1BFDBOjyAa6zr5VEBtg3-MDvcmK73uD5jP9Y-mDAGY4-yw-aorBusk9M9ibfmFl01svNw97eXaP_68rl-T7a7t836eZsoxnhIgCtdM61JCWWhGqDxpFXOJVOyBFaBqiVoXVTQ6AzqOMCzTMqSlauSV4wt0cOcG2v8jOCDaO3o4lNeZKuclEWeUx5VfFYpZ7130IjBmV66s6BETAxFK2aGYmIoZobR9jTbIDY4GXDCKwMRiDYuQhLamv8DfgERPX8o</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2560876614</pqid></control><display><type>article</type><title>Improved UV photodetector performance of NiO films by substitutional incorporation of Li</title><source>Elsevier ScienceDirect Journals</source><creator>Yadav, P.V. Karthik ; Ajitha, B. ; Annapureddy, V. ; Reddy, Y. Ashok Kumar ; Sreedhar, Adem</creator><creatorcontrib>Yadav, P.V. Karthik ; Ajitha, B. ; Annapureddy, V. ; Reddy, Y. Ashok Kumar ; Sreedhar, Adem</creatorcontrib><description>[Display omitted]
•We describe the lattice structure of substitutional Li+ in Ni2+ vacant site of NiO.•Possible mechanism of enhanced intrinsic p-type conductivity is projected.•The superior charge carrier generation is obtained through Li incorporation.•Achieve the higher photodetector performance in Li0.2Ni0.8O sample.
In this study, NiO and Li0.2Ni0.8O (LNO) thin films are successfully deposited by sputtering technique. X-ray photoelectron spectroscopy (XPS) analysis revealed the existence of Ni vacancies. Here, we fabricated metal-semiconductor-metal (M-S-M) structure for exploring the ultra-violet (UV) photodetector (PD) performance. The impact of interstitial oxygen and substitutional incorporation of monovalent Li+ ion in Ni2+ sites of NiO on UV photodetector performance are explored. In a word, LNO exhibited superior responsivity (0.218 A/W) and detectivity (0.467 × 1012 Jones) even at lower power density of 0.31 mW/cm2.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2021.130296</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Detectivity ; Li incorporation ; Lithium ions ; Materials science ; Nickel oxides ; NiO ; Photodetector ; Photoelectrons ; Photometers ; Responsivity ; Thin films ; X ray photoelectron spectroscopy</subject><ispartof>Materials letters, 2021-10, Vol.301, p.130296, Article 130296</ispartof><rights>2021 Elsevier B.V.</rights><rights>Copyright Elsevier BV Oct 15, 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c334t-e4cdb3dd08e87cfe1cdb1964a3ca8e39ecbaedd79efd2ebebee422aa838584933</citedby><cites>FETCH-LOGICAL-c334t-e4cdb3dd08e87cfe1cdb1964a3ca8e39ecbaedd79efd2ebebee422aa838584933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167577X21009939$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Yadav, P.V. Karthik</creatorcontrib><creatorcontrib>Ajitha, B.</creatorcontrib><creatorcontrib>Annapureddy, V.</creatorcontrib><creatorcontrib>Reddy, Y. Ashok Kumar</creatorcontrib><creatorcontrib>Sreedhar, Adem</creatorcontrib><title>Improved UV photodetector performance of NiO films by substitutional incorporation of Li</title><title>Materials letters</title><description>[Display omitted]
•We describe the lattice structure of substitutional Li+ in Ni2+ vacant site of NiO.•Possible mechanism of enhanced intrinsic p-type conductivity is projected.•The superior charge carrier generation is obtained through Li incorporation.•Achieve the higher photodetector performance in Li0.2Ni0.8O sample.
In this study, NiO and Li0.2Ni0.8O (LNO) thin films are successfully deposited by sputtering technique. X-ray photoelectron spectroscopy (XPS) analysis revealed the existence of Ni vacancies. Here, we fabricated metal-semiconductor-metal (M-S-M) structure for exploring the ultra-violet (UV) photodetector (PD) performance. The impact of interstitial oxygen and substitutional incorporation of monovalent Li+ ion in Ni2+ sites of NiO on UV photodetector performance are explored. In a word, LNO exhibited superior responsivity (0.218 A/W) and detectivity (0.467 × 1012 Jones) even at lower power density of 0.31 mW/cm2.</description><subject>Detectivity</subject><subject>Li incorporation</subject><subject>Lithium ions</subject><subject>Materials science</subject><subject>Nickel oxides</subject><subject>NiO</subject><subject>Photodetector</subject><subject>Photoelectrons</subject><subject>Photometers</subject><subject>Responsivity</subject><subject>Thin films</subject><subject>X ray photoelectron spectroscopy</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kEtrwzAQhEVpoWnaf9CDoGe7kqX4cSmU0EcgNJem5CZkaU1l7MiV5ED-fWXcc9nDsjAz7HwI3VOSUkLzxzbtZeggpBnJaEoZyar8Ai1oWbCEV0V1iRZRViSrojhcoxvvW0IIrwhfoMOmH5w9gcb7Lzx822A1BFDBOjyAa6zr5VEBtg3-MDvcmK73uD5jP9Y-mDAGY4-yw-aorBusk9M9ibfmFl01svNw97eXaP_68rl-T7a7t836eZsoxnhIgCtdM61JCWWhGqDxpFXOJVOyBFaBqiVoXVTQ6AzqOMCzTMqSlauSV4wt0cOcG2v8jOCDaO3o4lNeZKuclEWeUx5VfFYpZ7130IjBmV66s6BETAxFK2aGYmIoZobR9jTbIDY4GXDCKwMRiDYuQhLamv8DfgERPX8o</recordid><startdate>20211015</startdate><enddate>20211015</enddate><creator>Yadav, P.V. Karthik</creator><creator>Ajitha, B.</creator><creator>Annapureddy, V.</creator><creator>Reddy, Y. Ashok Kumar</creator><creator>Sreedhar, Adem</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20211015</creationdate><title>Improved UV photodetector performance of NiO films by substitutional incorporation of Li</title><author>Yadav, P.V. Karthik ; Ajitha, B. ; Annapureddy, V. ; Reddy, Y. Ashok Kumar ; Sreedhar, Adem</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c334t-e4cdb3dd08e87cfe1cdb1964a3ca8e39ecbaedd79efd2ebebee422aa838584933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Detectivity</topic><topic>Li incorporation</topic><topic>Lithium ions</topic><topic>Materials science</topic><topic>Nickel oxides</topic><topic>NiO</topic><topic>Photodetector</topic><topic>Photoelectrons</topic><topic>Photometers</topic><topic>Responsivity</topic><topic>Thin films</topic><topic>X ray photoelectron spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yadav, P.V. Karthik</creatorcontrib><creatorcontrib>Ajitha, B.</creatorcontrib><creatorcontrib>Annapureddy, V.</creatorcontrib><creatorcontrib>Reddy, Y. Ashok Kumar</creatorcontrib><creatorcontrib>Sreedhar, Adem</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yadav, P.V. Karthik</au><au>Ajitha, B.</au><au>Annapureddy, V.</au><au>Reddy, Y. Ashok Kumar</au><au>Sreedhar, Adem</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved UV photodetector performance of NiO films by substitutional incorporation of Li</atitle><jtitle>Materials letters</jtitle><date>2021-10-15</date><risdate>2021</risdate><volume>301</volume><spage>130296</spage><pages>130296-</pages><artnum>130296</artnum><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>[Display omitted]
•We describe the lattice structure of substitutional Li+ in Ni2+ vacant site of NiO.•Possible mechanism of enhanced intrinsic p-type conductivity is projected.•The superior charge carrier generation is obtained through Li incorporation.•Achieve the higher photodetector performance in Li0.2Ni0.8O sample.
In this study, NiO and Li0.2Ni0.8O (LNO) thin films are successfully deposited by sputtering technique. X-ray photoelectron spectroscopy (XPS) analysis revealed the existence of Ni vacancies. Here, we fabricated metal-semiconductor-metal (M-S-M) structure for exploring the ultra-violet (UV) photodetector (PD) performance. The impact of interstitial oxygen and substitutional incorporation of monovalent Li+ ion in Ni2+ sites of NiO on UV photodetector performance are explored. In a word, LNO exhibited superior responsivity (0.218 A/W) and detectivity (0.467 × 1012 Jones) even at lower power density of 0.31 mW/cm2.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2021.130296</doi></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Detectivity Li incorporation Lithium ions Materials science Nickel oxides NiO Photodetector Photoelectrons Photometers Responsivity Thin films X ray photoelectron spectroscopy |
| title | Improved UV photodetector performance of NiO films by substitutional incorporation of Li |
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