Design and fabrication of terahertz quantum cascade laser with double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

We have designed multilayer heterostructure (MH) based on three quantum well GaAs/Al0.15Ga0.85As active module with diagonal transitions and optimized oscillator strength - 0.425. Furthermore, we have developed a method for the fabrication of terahertz quantum cascade laser (THz QCL) with double met...

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Veröffentlicht in:IOP conference series. Materials Science and Engineering 2019-02, Vol.475 (1), p.12020
Hauptverfasser: Khabibullin, R A, Shchavruk, N V, Pavlov, A Yu, Klochkov, A N, Glinskiy, I A, Tomosh, K N, Ponomarev, D S, Cirlin, G E, Zhukov, A E
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container_title IOP conference series. Materials Science and Engineering
container_volume 475
creator Khabibullin, R A
Shchavruk, N V
Pavlov, A Yu
Klochkov, A N
Glinskiy, I A
Tomosh, K N
Ponomarev, D S
Cirlin, G E
Zhukov, A E
description We have designed multilayer heterostructure (MH) based on three quantum well GaAs/Al0.15Ga0.85As active module with diagonal transitions and optimized oscillator strength - 0.425. Furthermore, we have developed a method for the fabrication of terahertz quantum cascade laser (THz QCL) with double metal waveguide via low-temperature In-Au wafer bonding followed by SI-GaAs substrate removal. ICP RIE in BCl3/Ar has been used to obtain laser ridges (widths 50-200 mkm) with vertical sidewalls. We investigate the dependence of the MH energy band structure on the electric field and thermal properties of terahertz quantum cascade lasers (THz QCL) under different operation conditions.
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subjects Boron chlorides
Electric fields
Energy bands
Gallium arsenide
Gold
Heterostructures
Lasers
Low temperature
Multilayers
Quantum cascade lasers
Quantum wells
Silicon substrates
Thermodynamic properties
Waveguides
title Design and fabrication of terahertz quantum cascade laser with double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
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