Quantification of Trace-Level Silicon Doping in AlxGa1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis

Wavelength-dispersive X-ray (WDX) spectroscopy was used to measure silicon atom concentrations in the range 35–100 ppm [corresponding to (3–9) × 1018 cm−3] in doped AlxGa1–xN films using an electron probe microanalyser also equipped with a cathodoluminescence (CL) spectrometer. Doping with Si is the...

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Veröffentlicht in:	Microscopy and microanalysis 2021-08, Vol.27 (4), p.696-704
Hauptverfasser:	Spasevski, Lucia, Buse, Ben, Edwards, Paul R., Hunter, Daniel A., Enslin, Johannes, Foronda, Humberto M., Wernicke, Tim, Mehnke, Frank, Parbrook, Peter J., Kneissl, Michael, Martin, Robert W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cathodoluminescence Contamination Dopants Doping Electron probe Electron probes Gallium nitrides Mass spectrometry Mass spectroscopy Materials Science Applications Nanowires Organic chemicals Scientific imaging Secondary ion mass spectrometry Semiconductor lasers Silicon Trace elements Wavelength
Online-Zugang:	Volltext
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