Use of Plasma Information in Machine-Learning-Based Fault Detection and Classification for Advanced Equipment Control
For advanced equipment control, two schemata of real-time fault detection were performed using machine learning algorithms in silicon etching in SF 6 /O 2 /Ar plasma. Fault detection and classification is investigated with the plasma state information with optical emission spectroscopy (OES) data to...
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Veröffentlicht in: | IEEE transactions on semiconductor manufacturing 2021-08, Vol.34 (3), p.408-419 |
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description | For advanced equipment control, two schemata of real-time fault detection were performed using machine learning algorithms in silicon etching in SF 6 /O 2 /Ar plasma. Fault detection and classification is investigated with the plasma state information with optical emission spectroscopy (OES) data to find the root cause of the anomaly in the process parameters. Fault detection and control is also demonstrated to predict the shift of the process parameter along the amount of process gas flow rate injected into the chamber, considering a fault. Especially, plasma information (PI), such as electron temperature and electron density, was derived from OES data into equation-based corona model. These were utilized to evaluate which process parameter is the most significantly affecting on the performance of the established model through Shapley value in fault detection and control. By the combination of isolation forest algorithm for finding the plasma abnormalities in real time and Adaboost algorithm for classifying root causes of faults, the suggested algorithm could accurately detect the root cause. DeepSHAP algorithm helped not only the prediction of gas flow rate, but PI was identified as critical parameter, interpreting the model through Shapley value. We propose a new multi-function integrated algorithm by the ensemble algorithms. |
doi_str_mv | 10.1109/TSM.2021.3079211 |
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Fault detection and classification is investigated with the plasma state information with optical emission spectroscopy (OES) data to find the root cause of the anomaly in the process parameters. Fault detection and control is also demonstrated to predict the shift of the process parameter along the amount of process gas flow rate injected into the chamber, considering a fault. Especially, plasma information (PI), such as electron temperature and electron density, was derived from OES data into equation-based corona model. These were utilized to evaluate which process parameter is the most significantly affecting on the performance of the established model through Shapley value in fault detection and control. By the combination of isolation forest algorithm for finding the plasma abnormalities in real time and Adaboost algorithm for classifying root causes of faults, the suggested algorithm could accurately detect the root cause. DeepSHAP algorithm helped not only the prediction of gas flow rate, but PI was identified as critical parameter, interpreting the model through Shapley value. We propose a new multi-function integrated algorithm by the ensemble algorithms.</description><identifier>ISSN: 0894-6507</identifier><identifier>EISSN: 1558-2345</identifier><identifier>DOI: 10.1109/TSM.2021.3079211</identifier><identifier>CODEN: ITSMED</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Abnormalities ; advanced equipment control ; Algorithms ; Argon plasma ; Classification ; Classification algorithms ; Control equipment ; data mining ; Electron density ; Electron energy ; Emission analysis ; Etching ; Fault detection ; FDC ; Flow velocity ; Gas flow ; Machine learning ; Machine learning algorithms ; Mathematical models ; Optical emission spectroscopy ; Parameter identification ; Plasma ; plasma information (PI) ; Plasmas ; Prediction algorithms ; Process control ; Process parameters ; Real time ; Real-time systems ; Root cause analysis</subject><ispartof>IEEE transactions on semiconductor manufacturing, 2021-08, Vol.34 (3), p.408-419</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c357t-4c6ff12d90b6cbbdc23bbd073e93a72ca9b4ff16fe3e8461ea22842fbe880cd73</citedby><cites>FETCH-LOGICAL-c357t-4c6ff12d90b6cbbdc23bbd073e93a72ca9b4ff16fe3e8461ea22842fbe880cd73</cites><orcidid>0000-0002-3023-6327 ; 0000-0002-6576-690X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9427994$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9427994$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, Dong Hwan</creatorcontrib><creatorcontrib>Hong, Sang Jeen</creatorcontrib><title>Use of Plasma Information in Machine-Learning-Based Fault Detection and Classification for Advanced Equipment Control</title><title>IEEE transactions on semiconductor manufacturing</title><addtitle>TSM</addtitle><description>For advanced equipment control, two schemata of real-time fault detection were performed using machine learning algorithms in silicon etching in SF 6 /O 2 /Ar plasma. Fault detection and classification is investigated with the plasma state information with optical emission spectroscopy (OES) data to find the root cause of the anomaly in the process parameters. Fault detection and control is also demonstrated to predict the shift of the process parameter along the amount of process gas flow rate injected into the chamber, considering a fault. Especially, plasma information (PI), such as electron temperature and electron density, was derived from OES data into equation-based corona model. These were utilized to evaluate which process parameter is the most significantly affecting on the performance of the established model through Shapley value in fault detection and control. By the combination of isolation forest algorithm for finding the plasma abnormalities in real time and Adaboost algorithm for classifying root causes of faults, the suggested algorithm could accurately detect the root cause. DeepSHAP algorithm helped not only the prediction of gas flow rate, but PI was identified as critical parameter, interpreting the model through Shapley value. We propose a new multi-function integrated algorithm by the ensemble algorithms.</description><subject>Abnormalities</subject><subject>advanced equipment control</subject><subject>Algorithms</subject><subject>Argon plasma</subject><subject>Classification</subject><subject>Classification algorithms</subject><subject>Control equipment</subject><subject>data mining</subject><subject>Electron density</subject><subject>Electron energy</subject><subject>Emission analysis</subject><subject>Etching</subject><subject>Fault detection</subject><subject>FDC</subject><subject>Flow velocity</subject><subject>Gas flow</subject><subject>Machine learning</subject><subject>Machine learning algorithms</subject><subject>Mathematical models</subject><subject>Optical emission spectroscopy</subject><subject>Parameter identification</subject><subject>Plasma</subject><subject>plasma information (PI)</subject><subject>Plasmas</subject><subject>Prediction algorithms</subject><subject>Process control</subject><subject>Process parameters</subject><subject>Real time</subject><subject>Real-time systems</subject><subject>Root cause analysis</subject><issn>0894-6507</issn><issn>1558-2345</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEtLAzEUhYMoWB97wU3A9dS8ZjJZ1tpqoUXBdj1kMjea0mbaZEbw35va4uaezXfOhQ-hO0qGlBL1uPxYDBlhdMiJVIzSMzSgeV5mjIv8HA1IqURW5EReoqsY14RQIZQcoH4VAbcWv2903Go887YNW9251mPn8UKbL-chm4MO3vnP7ElHaPBU95sOP0MH5o_UvsHjNBCddeZYTjN41HxrbxI_2fdutwXf4XHru9BubtCF1ZsIt6e8RqvpZDl-zeZvL7PxaJ4ZnssuE6awlrJGkbowdd0YxtMlkoPiWjKjVS0SUFjgUIqCgmasFMzWUJbENJJfo4fj7i60-x5iV63bPvj0smJ5LpVUXKhEkSNlQhtjAFvtgtvq8FNRUh3kVkludZBbneSmyv2x4gDgH1eCSaUE_wVzvndZ</recordid><startdate>20210801</startdate><enddate>20210801</enddate><creator>Kim, Dong Hwan</creator><creator>Hong, Sang Jeen</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-3023-6327</orcidid><orcidid>https://orcid.org/0000-0002-6576-690X</orcidid></search><sort><creationdate>20210801</creationdate><title>Use of Plasma Information in Machine-Learning-Based Fault Detection and Classification for Advanced Equipment Control</title><author>Kim, Dong Hwan ; Hong, Sang Jeen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c357t-4c6ff12d90b6cbbdc23bbd073e93a72ca9b4ff16fe3e8461ea22842fbe880cd73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Abnormalities</topic><topic>advanced equipment control</topic><topic>Algorithms</topic><topic>Argon plasma</topic><topic>Classification</topic><topic>Classification algorithms</topic><topic>Control equipment</topic><topic>data mining</topic><topic>Electron density</topic><topic>Electron energy</topic><topic>Emission analysis</topic><topic>Etching</topic><topic>Fault detection</topic><topic>FDC</topic><topic>Flow velocity</topic><topic>Gas flow</topic><topic>Machine learning</topic><topic>Machine learning algorithms</topic><topic>Mathematical models</topic><topic>Optical emission spectroscopy</topic><topic>Parameter identification</topic><topic>Plasma</topic><topic>plasma information (PI)</topic><topic>Plasmas</topic><topic>Prediction algorithms</topic><topic>Process control</topic><topic>Process parameters</topic><topic>Real time</topic><topic>Real-time systems</topic><topic>Root cause analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Dong Hwan</creatorcontrib><creatorcontrib>Hong, Sang Jeen</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on semiconductor manufacturing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Dong Hwan</au><au>Hong, Sang Jeen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Use of Plasma Information in Machine-Learning-Based Fault Detection and Classification for Advanced Equipment Control</atitle><jtitle>IEEE transactions on semiconductor manufacturing</jtitle><stitle>TSM</stitle><date>2021-08-01</date><risdate>2021</risdate><volume>34</volume><issue>3</issue><spage>408</spage><epage>419</epage><pages>408-419</pages><issn>0894-6507</issn><eissn>1558-2345</eissn><coden>ITSMED</coden><abstract>For advanced equipment control, two schemata of real-time fault detection were performed using machine learning algorithms in silicon etching in SF 6 /O 2 /Ar plasma. Fault detection and classification is investigated with the plasma state information with optical emission spectroscopy (OES) data to find the root cause of the anomaly in the process parameters. Fault detection and control is also demonstrated to predict the shift of the process parameter along the amount of process gas flow rate injected into the chamber, considering a fault. Especially, plasma information (PI), such as electron temperature and electron density, was derived from OES data into equation-based corona model. These were utilized to evaluate which process parameter is the most significantly affecting on the performance of the established model through Shapley value in fault detection and control. By the combination of isolation forest algorithm for finding the plasma abnormalities in real time and Adaboost algorithm for classifying root causes of faults, the suggested algorithm could accurately detect the root cause. 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subjects | Abnormalities advanced equipment control Algorithms Argon plasma Classification Classification algorithms Control equipment data mining Electron density Electron energy Emission analysis Etching Fault detection FDC Flow velocity Gas flow Machine learning Machine learning algorithms Mathematical models Optical emission spectroscopy Parameter identification Plasma plasma information (PI) Plasmas Prediction algorithms Process control Process parameters Real time Real-time systems Root cause analysis |
title | Use of Plasma Information in Machine-Learning-Based Fault Detection and Classification for Advanced Equipment Control |
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