Berry phase induced entanglement of hole-spin qubits in a microwave cavity

Hole spins localized in semiconductor structures, such as quantum dots or defects, serve in the realization of efficient gate-tunable solid-state quantum bits. Here, we study two electrically driven spin-3/2 holes coupled to the electromagnetic field of a microwave cavity. We show that the interplay...

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Veröffentlicht in:Physical review. B 2021-07, Vol.104 (4), p.1, Article L041402
Hauptverfasser: Wysokiński, Marcin M., Płodzień, Marcin, Trif, Mircea
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Sprache:eng
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Zusammenfassung:Hole spins localized in semiconductor structures, such as quantum dots or defects, serve in the realization of efficient gate-tunable solid-state quantum bits. Here, we study two electrically driven spin-3/2 holes coupled to the electromagnetic field of a microwave cavity. We show that the interplay between the non-Abelian Berry phases generated by local time-dependent electrical fields and the shared cavity photons allows for fast manipulation, detection, and long-range entanglement of the hole-spin qubits in the absence of any external magnetic field. Owing to its geometrical structure, such a scheme is more robust against external noises than conventional hole-spin qubit implementations. These results suggest that hole spins are favorable qubits for scalable quantum computing by purely electrical means.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.104.L041402