Berry phase induced entanglement of hole-spin qubits in a microwave cavity
Hole spins localized in semiconductor structures, such as quantum dots or defects, serve in the realization of efficient gate-tunable solid-state quantum bits. Here, we study two electrically driven spin-3/2 holes coupled to the electromagnetic field of a microwave cavity. We show that the interplay...
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Veröffentlicht in: | Physical review. B 2021-07, Vol.104 (4), p.1, Article L041402 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Hole spins localized in semiconductor structures, such as quantum dots or defects, serve in the realization of efficient gate-tunable solid-state quantum bits. Here, we study two electrically driven spin-3/2 holes coupled to the electromagnetic field of a microwave cavity. We show that the interplay between the non-Abelian Berry phases generated by local time-dependent electrical fields and the shared cavity photons allows for fast manipulation, detection, and long-range entanglement of the hole-spin qubits in the absence of any external magnetic field. Owing to its geometrical structure, such a scheme is more robust against external noises than conventional hole-spin qubit implementations. These results suggest that hole spins are favorable qubits for scalable quantum computing by purely electrical means. |
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ISSN: | 2469-9950 2469-9969 |
DOI: | 10.1103/PhysRevB.104.L041402 |