Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel
This paper proposes the use of nitrogen ion implantation to form circular and donut-shaped channels in vertical GaN Schottky barrier diodes (SBDs). Nitrogen ions with a dose of 1 × 10 15 cm −2 and energy of 100/150 keV were used to form a current blocking layer to separate the channel from the mesa...
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| Veröffentlicht in: | Journal of electronic materials 2021-09, Vol.50 (9), p.5453-5461 |
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| creator | Chen, Chih-Wei Kuo, Ling-Yun Lai, Yu-Chen Hsin, Yue-ming |
| description | This paper proposes the use of nitrogen ion implantation to form circular and donut-shaped channels in vertical GaN Schottky barrier diodes (SBDs). Nitrogen ions with a dose of 1 × 10
15
cm
−2
and energy of 100/150 keV were used to form a current blocking layer to separate the channel from the mesa edge, thus reducing the etching damage-induced leakage in the reverse bias. SBDs with circular and donut-shaped channels exhibited reduced leakage current, and hence, increased breakdown voltage. In addition, the SBD with a donut-shaped channel exhibited improved specific on-resistance (
R
ON)
because it had a wider current spread than did the SBD with a circular channel. Moreover, a floating metal ring (FMR) was added to the SBD with a donut-shaped channel to improve the forward- and reverse-bias characteristics. |
| doi_str_mv | 10.1007/s11664-021-09080-7 |
| format | Article |
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15
cm
−2
and energy of 100/150 keV were used to form a current blocking layer to separate the channel from the mesa edge, thus reducing the etching damage-induced leakage in the reverse bias. SBDs with circular and donut-shaped channels exhibited reduced leakage current, and hence, increased breakdown voltage. In addition, the SBD with a donut-shaped channel exhibited improved specific on-resistance (
R
ON)
because it had a wider current spread than did the SBD with a circular channel. Moreover, a floating metal ring (FMR) was added to the SBD with a donut-shaped channel to improve the forward- and reverse-bias characteristics.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-021-09080-7</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Bias ; Channels ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electronics and Microelectronics ; Gallium nitrides ; Instrumentation ; Ion implantation ; Leakage current ; Materials Science ; Nitrogen ; Nitrogen ions ; Optical and Electronic Materials ; Original Research Article ; Schottky diodes ; Solid State Physics</subject><ispartof>Journal of electronic materials, 2021-09, Vol.50 (9), p.5453-5461</ispartof><rights>The Minerals, Metals & Materials Society 2021</rights><rights>The Minerals, Metals & Materials Society 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-f6d3bc72c11d21cc9dfba000d4850372995486885a108bc2e0262a75d44f0daf3</citedby><cites>FETCH-LOGICAL-c319t-f6d3bc72c11d21cc9dfba000d4850372995486885a108bc2e0262a75d44f0daf3</cites><orcidid>0000-0001-6733-4433</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-021-09080-7$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-021-09080-7$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Chen, Chih-Wei</creatorcontrib><creatorcontrib>Kuo, Ling-Yun</creatorcontrib><creatorcontrib>Lai, Yu-Chen</creatorcontrib><creatorcontrib>Hsin, Yue-ming</creatorcontrib><title>Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>This paper proposes the use of nitrogen ion implantation to form circular and donut-shaped channels in vertical GaN Schottky barrier diodes (SBDs). Nitrogen ions with a dose of 1 × 10
15
cm
−2
and energy of 100/150 keV were used to form a current blocking layer to separate the channel from the mesa edge, thus reducing the etching damage-induced leakage in the reverse bias. SBDs with circular and donut-shaped channels exhibited reduced leakage current, and hence, increased breakdown voltage. In addition, the SBD with a donut-shaped channel exhibited improved specific on-resistance (
R
ON)
because it had a wider current spread than did the SBD with a circular channel. Moreover, a floating metal ring (FMR) was added to the SBD with a donut-shaped channel to improve the forward- and reverse-bias characteristics.</description><subject>Bias</subject><subject>Channels</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electronics and Microelectronics</subject><subject>Gallium nitrides</subject><subject>Instrumentation</subject><subject>Ion implantation</subject><subject>Leakage current</subject><subject>Materials Science</subject><subject>Nitrogen</subject><subject>Nitrogen ions</subject><subject>Optical and Electronic Materials</subject><subject>Original Research Article</subject><subject>Schottky diodes</subject><subject>Solid State Physics</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp9kE1LAzEQhoMoWKt_wFPAc3Qm2ezHUauthVIPteItpNlsu7XdrEl66L93dQVvHoZh4HnfgYeQa4RbBMjuAmKaJgw4MiggB5adkAHKRDDM0_dTMgCRIpNcyHNyEcIWACXmOCCrN-tjbfSOTvScLszGxfhxpA_a-9p6-li70tJlqJs1ndfRu7Vt6NR1s293uok61t0RHR07v6eaPrrmENlio1tb0tFGN43dXZKzSu-CvfrdQ7IcP72OntnsZTId3c-YEVhEVqWlWJmMG8SSozFFWa00AJRJLkFkvChkkqd5LjVCvjLcAk-5zmSZJBWUuhJDctP3tt59HmyIausOvuleKi5lJiArUuwo3lPGuxC8rVTr6732R4Wgvl2q3qXqXKoflyrrQqIPhQ5u1tb_Vf-T-gJPrnYw</recordid><startdate>20210901</startdate><enddate>20210901</enddate><creator>Chen, Chih-Wei</creator><creator>Kuo, Ling-Yun</creator><creator>Lai, Yu-Chen</creator><creator>Hsin, Yue-ming</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PHGZM</scope><scope>PHGZT</scope><scope>PKEHL</scope><scope>PQEST</scope><scope>PQGLB</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0001-6733-4433</orcidid></search><sort><creationdate>20210901</creationdate><title>Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel</title><author>Chen, Chih-Wei ; Kuo, Ling-Yun ; Lai, Yu-Chen ; Hsin, Yue-ming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-f6d3bc72c11d21cc9dfba000d4850372995486885a108bc2e0262a75d44f0daf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Bias</topic><topic>Channels</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electronics and Microelectronics</topic><topic>Gallium nitrides</topic><topic>Instrumentation</topic><topic>Ion implantation</topic><topic>Leakage current</topic><topic>Materials Science</topic><topic>Nitrogen</topic><topic>Nitrogen ions</topic><topic>Optical and Electronic Materials</topic><topic>Original Research Article</topic><topic>Schottky diodes</topic><topic>Solid State Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Chih-Wei</creatorcontrib><creatorcontrib>Kuo, Ling-Yun</creatorcontrib><creatorcontrib>Lai, Yu-Chen</creatorcontrib><creatorcontrib>Hsin, Yue-ming</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest Central (New)</collection><collection>ProQuest One Academic (New)</collection><collection>ProQuest One Academic Middle East (New)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Applied & Life Sciences</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Chih-Wei</au><au>Kuo, Ling-Yun</au><au>Lai, Yu-Chen</au><au>Hsin, Yue-ming</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2021-09-01</date><risdate>2021</risdate><volume>50</volume><issue>9</issue><spage>5453</spage><epage>5461</epage><pages>5453-5461</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>This paper proposes the use of nitrogen ion implantation to form circular and donut-shaped channels in vertical GaN Schottky barrier diodes (SBDs). Nitrogen ions with a dose of 1 × 10
15
cm
−2
and energy of 100/150 keV were used to form a current blocking layer to separate the channel from the mesa edge, thus reducing the etching damage-induced leakage in the reverse bias. SBDs with circular and donut-shaped channels exhibited reduced leakage current, and hence, increased breakdown voltage. In addition, the SBD with a donut-shaped channel exhibited improved specific on-resistance (
R
ON)
because it had a wider current spread than did the SBD with a circular channel. Moreover, a floating metal ring (FMR) was added to the SBD with a donut-shaped channel to improve the forward- and reverse-bias characteristics.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-021-09080-7</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0001-6733-4433</orcidid></addata></record> |
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| subjects | Bias Channels Characterization and Evaluation of Materials Chemistry and Materials Science Electronics and Microelectronics Gallium nitrides Instrumentation Ion implantation Leakage current Materials Science Nitrogen Nitrogen ions Optical and Electronic Materials Original Research Article Schottky diodes Solid State Physics |
| title | Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel |
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