Impact of film thickness on the external quantum efficiency of bulk photovoltaic effects in Mn-doped BiFeO3 thin films

This work demonstrates an enhancement of the external quantum efficiency (η ex) associated with the bulk photovoltaic effect (BPVE) resulting from the ballistic conduction of hot carriers in indium tin oxide/Mn-doped BiFeO3 (BFMO)/SrRuO3 capacitors in response to a blue–violet laser (λ = 405 nm). Th...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2021-11, Vol.60 (SF)
Hauptverfasser:	Nakashima, Seiji, Kato, Ren, Fujisawa, Hironori
Format:	Artikel
Sprache:	eng
Schlagworte:	BiFeO Bulk photovoltaic effect Circuits Efficiency Ferroelectrics Film thickness Indium tin oxides Manganese Photovoltaic cells Photovoltaic effect Quantum efficiency Short circuit currents Thin films
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