Disparate structural changes in the titanium dioxide thin film coated on the p-type Si and porous silicon textures after gamma irradiation

•Disparate structural changes were observed on the anatase and the rutile phase of TiO2 thin film coated on p-type Si and Porous Silicon (PSi) textures after gamma irradiation.•The anatase phase of TiO2 experienced linear defects than the rutile phase structure with an increase of gamma dose.•Band gap energy is decreased while the dielectric constant is increased with the increase of gamma dose in both the hetero-junctions.•The porous texture of p-type silicon is found to be suitable for the formation of larger crystallite with less strain which can provide mechanical stability against gamma radiation. Gamma irradiation effects on the thin film of titanium dioxide (TiO2) coated on p-type silicon (Si) and porous silicon (PSi) by sol–gel spin coating technique is investigated for the gamma dose of 100 to 1000 mGy. Characterization studies by the X-Ray Diffraction, Fourier Transform Infrared and Photoluminescence spectroscopy, and I-V study revealed the measurable changes in structural, optical and electrical properties due to gamma irradiation which are disparate in the hetero-junction on silicon and porous silicon texture. The anatase phase of TiO2 experienced linear defects then the rutile phase structure. Band gap energy is decreased while the dielectric constant is increased with increase of gamma dose. The strain due to crystallization of sol–gel of TiO2 on Si substrate is higher than the PSi substrate and found to be changed after irradiation. Porous texture is found to be suitable for formation of larger crystallite with less strain which can provide mechanical stability.