Effect of the Radiation Power on the Modification of Oscillations of the Photocurrent in Single-Barrier p–i–n GaAs/AlAs/GaAs Heterostructures with InAs Quantum Dots

The effect of the power of incident light radiation on the behavior of quantum oscillations of the photocurrent in single-barrier p – i – n GaAs/AlAs heterostructures with InAs quantum dots has been studied. The strong suppression of initial oscillations with increasing power caused by the destructi...

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Veröffentlicht in:	JETP letters 2021-05, Vol.113 (9), p.586-591
Hauptverfasser:	Vdovin, E. E., Khanin, Yu. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic Biological and Medical Physics Biophysics Condensed Matter Diffusion layers Heterostructures Incident light Indium arsenides Molecular Optical and Plasma Physics Oscillations Particle and Nuclear Physics Photoelectric effect Photoelectric emission Physics Physics and Astronomy Quantum dots Quantum Information Technology Radiation Solid State Physics Spintronics
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