Nb‐Mediated Grain Growth and Grain‐Boundary Engineering in Mg3Sb2‐Based Thermoelectric Materials

The poor carrier mobility of polycrystalline Mg3Sb2 at low temperatures strongly degrades the thermoelectric performance. Ionized impurities are initially thought to dominate charge carrier scattering at low temperatures. Accordingly, the increased electrical conductivity by replacing Mg with metals...

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Veröffentlicht in:	Advanced functional materials 2021-07, Vol.31 (28), p.n/a
Hauptverfasser:	Luo, Ting, Kuo, Jimmy J., Griffith, Kent J., Imasato, Kazuki, Cojocaru‐Mirédin, Oana, Wuttig, Matthias, Gault, Baptiste, Yu, Yuan, Snyder, G. Jeffrey
Format:	Artikel
Sprache:	eng
Schlagworte:	Additives Antimony Bismuth Carrier mobility comprehensive microscopy Current carriers Electrical resistivity Grain boundaries grain boundary scattering Grain growth Impurities Interfacial energy ionized impurity scattering Low temperature Magnesium Materials science Mg 3Sb 2 NMR spectroscopy Scattering Spectrum analysis thermoelectric Thermoelectric materials Transport properties Wetting
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