X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

The n-type ultrathin fully depleted silicon-on-insulator (FDSOI) metal–oxide–semiconductor field-effect transistors (MOSFETs), with a Hf 0.5 Zr 0.5 O 2 high dielectric permittivity (high- k ) dielectric as gate insulator, were fabricated. The total ionizing dose effects were investigated, and an X-r...

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