Partial Isolation Type Saddle-FinFET(Pi-FinFET) for Sub-30 nm DRAM Cell Transistors
In this paper, we proposed a novel saddle type FinFET (S-FinFET) to effectively solve problems occurring under the capacitor node of a dynamic random-access memory (DRAM) cell and showed how its structure was superior to conventional S-FinFETs in terms of short channel effect (SCE), subthreshold slo...
Gespeichert in:
| Veröffentlicht in: | Electronics (Basel) 2019-01, Vol.8 (1), p.8 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 1 |
| container_start_page | 8 |
| container_title | Electronics (Basel) |
| container_volume | 8 |
| creator | Kim, Young Kwon Lee, Jin Sung Kim, Geon Park, Taesik Kim, Hui Jung Cho, Young Pyo Park, Young June Lee, Myoung Jin |
| description | In this paper, we proposed a novel saddle type FinFET (S-FinFET) to effectively solve problems occurring under the capacitor node of a dynamic random-access memory (DRAM) cell and showed how its structure was superior to conventional S-FinFETs in terms of short channel effect (SCE), subthreshold slope (SS), and gate-induced drain leakage (GIDL). The proposed FinFET exhibited four times lower Ioff than modified S-FinFET, called RFinFET, with more improved drain-induced barrier lowering (DIBL) characteristics, while minimizing Ion reduction compared to RFinFET. Our results also confirmed that the proposed device showed improved drain-induced barrier lowering (DIBL) and Ioff characteristics as gate channel length decreased. |
| doi_str_mv | 10.3390/electronics8010008 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2548382784</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2548382784</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-1876db2de8631e7447fd7bac868ca8134cb1ee1834e0085e5a41b3d2c7a71e383</originalsourceid><addsrcrecordid>eNplkD9PwzAQxS0EElXpF2CyxAJDwP8SO2MVKFQqoiJhjhznIrly42CnQ789Qe2AxHRv-N29ew-hW0oeOc_JEzgwY_C9NVERSghRF2jGiMyTnOXs8o--RosYdxNBcsoVJzNUbnUYrXZ4Hb3To_U9ro4D4FK3rYNkZfvVS3W_tWf1gDsfcHloEk5wv8fPn8t3XIBzuAq6jzaOPsQbdNVpF2FxnnP0Na0Wb8nm43VdLDeJ4TQfE6pk1jasBZVxClII2bWy0UZlymhFuTANBaCKC5gipZBqQRveMiO1pDC9P0d3p7tD8N8HiGO984fQT5Y1S4XiikklJoqdKBN8jAG6egh2r8OxpqT-7a_-3x__AVQNY7o</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2548382784</pqid></control><display><type>article</type><title>Partial Isolation Type Saddle-FinFET(Pi-FinFET) for Sub-30 nm DRAM Cell Transistors</title><source>MDPI - Multidisciplinary Digital Publishing Institute</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><creator>Kim, Young Kwon ; Lee, Jin Sung ; Kim, Geon ; Park, Taesik ; Kim, Hui Jung ; Cho, Young Pyo ; Park, Young June ; Lee, Myoung Jin</creator><creatorcontrib>Kim, Young Kwon ; Lee, Jin Sung ; Kim, Geon ; Park, Taesik ; Kim, Hui Jung ; Cho, Young Pyo ; Park, Young June ; Lee, Myoung Jin</creatorcontrib><description>In this paper, we proposed a novel saddle type FinFET (S-FinFET) to effectively solve problems occurring under the capacitor node of a dynamic random-access memory (DRAM) cell and showed how its structure was superior to conventional S-FinFETs in terms of short channel effect (SCE), subthreshold slope (SS), and gate-induced drain leakage (GIDL). The proposed FinFET exhibited four times lower Ioff than modified S-FinFET, called RFinFET, with more improved drain-induced barrier lowering (DIBL) characteristics, while minimizing Ion reduction compared to RFinFET. Our results also confirmed that the proposed device showed improved drain-induced barrier lowering (DIBL) and Ioff characteristics as gate channel length decreased.</description><identifier>ISSN: 2079-9292</identifier><identifier>EISSN: 2079-9292</identifier><identifier>DOI: 10.3390/electronics8010008</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Conflicts of interest ; Dynamic random access memory ; Electric fields ; Silicon ; Transistors</subject><ispartof>Electronics (Basel), 2019-01, Vol.8 (1), p.8</ispartof><rights>2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-1876db2de8631e7447fd7bac868ca8134cb1ee1834e0085e5a41b3d2c7a71e383</citedby><cites>FETCH-LOGICAL-c319t-1876db2de8631e7447fd7bac868ca8134cb1ee1834e0085e5a41b3d2c7a71e383</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Kim, Young Kwon</creatorcontrib><creatorcontrib>Lee, Jin Sung</creatorcontrib><creatorcontrib>Kim, Geon</creatorcontrib><creatorcontrib>Park, Taesik</creatorcontrib><creatorcontrib>Kim, Hui Jung</creatorcontrib><creatorcontrib>Cho, Young Pyo</creatorcontrib><creatorcontrib>Park, Young June</creatorcontrib><creatorcontrib>Lee, Myoung Jin</creatorcontrib><title>Partial Isolation Type Saddle-FinFET(Pi-FinFET) for Sub-30 nm DRAM Cell Transistors</title><title>Electronics (Basel)</title><description>In this paper, we proposed a novel saddle type FinFET (S-FinFET) to effectively solve problems occurring under the capacitor node of a dynamic random-access memory (DRAM) cell and showed how its structure was superior to conventional S-FinFETs in terms of short channel effect (SCE), subthreshold slope (SS), and gate-induced drain leakage (GIDL). The proposed FinFET exhibited four times lower Ioff than modified S-FinFET, called RFinFET, with more improved drain-induced barrier lowering (DIBL) characteristics, while minimizing Ion reduction compared to RFinFET. Our results also confirmed that the proposed device showed improved drain-induced barrier lowering (DIBL) and Ioff characteristics as gate channel length decreased.</description><subject>Conflicts of interest</subject><subject>Dynamic random access memory</subject><subject>Electric fields</subject><subject>Silicon</subject><subject>Transistors</subject><issn>2079-9292</issn><issn>2079-9292</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNplkD9PwzAQxS0EElXpF2CyxAJDwP8SO2MVKFQqoiJhjhznIrly42CnQ789Qe2AxHRv-N29ew-hW0oeOc_JEzgwY_C9NVERSghRF2jGiMyTnOXs8o--RosYdxNBcsoVJzNUbnUYrXZ4Hb3To_U9ro4D4FK3rYNkZfvVS3W_tWf1gDsfcHloEk5wv8fPn8t3XIBzuAq6jzaOPsQbdNVpF2FxnnP0Na0Wb8nm43VdLDeJ4TQfE6pk1jasBZVxClII2bWy0UZlymhFuTANBaCKC5gipZBqQRveMiO1pDC9P0d3p7tD8N8HiGO984fQT5Y1S4XiikklJoqdKBN8jAG6egh2r8OxpqT-7a_-3x__AVQNY7o</recordid><startdate>20190101</startdate><enddate>20190101</enddate><creator>Kim, Young Kwon</creator><creator>Lee, Jin Sung</creator><creator>Kim, Geon</creator><creator>Park, Taesik</creator><creator>Kim, Hui Jung</creator><creator>Cho, Young Pyo</creator><creator>Park, Young June</creator><creator>Lee, Myoung Jin</creator><general>MDPI AG</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>20190101</creationdate><title>Partial Isolation Type Saddle-FinFET(Pi-FinFET) for Sub-30 nm DRAM Cell Transistors</title><author>Kim, Young Kwon ; Lee, Jin Sung ; Kim, Geon ; Park, Taesik ; Kim, Hui Jung ; Cho, Young Pyo ; Park, Young June ; Lee, Myoung Jin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-1876db2de8631e7447fd7bac868ca8134cb1ee1834e0085e5a41b3d2c7a71e383</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Conflicts of interest</topic><topic>Dynamic random access memory</topic><topic>Electric fields</topic><topic>Silicon</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Young Kwon</creatorcontrib><creatorcontrib>Lee, Jin Sung</creatorcontrib><creatorcontrib>Kim, Geon</creatorcontrib><creatorcontrib>Park, Taesik</creatorcontrib><creatorcontrib>Kim, Hui Jung</creatorcontrib><creatorcontrib>Cho, Young Pyo</creatorcontrib><creatorcontrib>Park, Young June</creatorcontrib><creatorcontrib>Lee, Myoung Jin</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><jtitle>Electronics (Basel)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Young Kwon</au><au>Lee, Jin Sung</au><au>Kim, Geon</au><au>Park, Taesik</au><au>Kim, Hui Jung</au><au>Cho, Young Pyo</au><au>Park, Young June</au><au>Lee, Myoung Jin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Partial Isolation Type Saddle-FinFET(Pi-FinFET) for Sub-30 nm DRAM Cell Transistors</atitle><jtitle>Electronics (Basel)</jtitle><date>2019-01-01</date><risdate>2019</risdate><volume>8</volume><issue>1</issue><spage>8</spage><pages>8-</pages><issn>2079-9292</issn><eissn>2079-9292</eissn><abstract>In this paper, we proposed a novel saddle type FinFET (S-FinFET) to effectively solve problems occurring under the capacitor node of a dynamic random-access memory (DRAM) cell and showed how its structure was superior to conventional S-FinFETs in terms of short channel effect (SCE), subthreshold slope (SS), and gate-induced drain leakage (GIDL). The proposed FinFET exhibited four times lower Ioff than modified S-FinFET, called RFinFET, with more improved drain-induced barrier lowering (DIBL) characteristics, while minimizing Ion reduction compared to RFinFET. Our results also confirmed that the proposed device showed improved drain-induced barrier lowering (DIBL) and Ioff characteristics as gate channel length decreased.</abstract><cop>Basel</cop><pub>MDPI AG</pub><doi>10.3390/electronics8010008</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2079-9292 |
| ispartof | Electronics (Basel), 2019-01, Vol.8 (1), p.8 |
| issn | 2079-9292 2079-9292 |
| language | eng |
| recordid | cdi_proquest_journals_2548382784 |
| source | MDPI - Multidisciplinary Digital Publishing Institute; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals |
| subjects | Conflicts of interest Dynamic random access memory Electric fields Silicon Transistors |
| title | Partial Isolation Type Saddle-FinFET(Pi-FinFET) for Sub-30 nm DRAM Cell Transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T16%3A39%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Partial%20Isolation%20Type%20Saddle-FinFET(Pi-FinFET)%20for%20Sub-30%20nm%20DRAM%20Cell%20Transistors&rft.jtitle=Electronics%20(Basel)&rft.au=Kim,%20Young%20Kwon&rft.date=2019-01-01&rft.volume=8&rft.issue=1&rft.spage=8&rft.pages=8-&rft.issn=2079-9292&rft.eissn=2079-9292&rft_id=info:doi/10.3390/electronics8010008&rft_dat=%3Cproquest_cross%3E2548382784%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2548382784&rft_id=info:pmid/&rfr_iscdi=true |