Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering
Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the...
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| Veröffentlicht in: | Coatings (Basel) 2019, Vol.9 (12), p.859 |
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| creator | Wang, Wei-Kai Liu, Kuo-Feng Tsai, Pi-Chuen Xu, Yi-Jie Huang, Shih-Yung |
| description | Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the grown ZnGa2O4 thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900 °C. Excess Ga released from ZnGa2O4 during thermal annealing treatment resulted in the appearance of a Ga2O3 phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa2O4 (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa2O4 thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa2O4 thin film improved at higher annealing temperatures. |
| doi_str_mv | 10.3390/coatings9120859 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2548357636</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2548357636</sourcerecordid><originalsourceid>FETCH-LOGICAL-c310t-22ff6797caa997a6a30d2e3da730b0529b55d0690af1136297e7ef2b0e8796493</originalsourceid><addsrcrecordid>eNpdkL1rwzAQxUVpoSHN3FXQ2Y0-bMkaQ2jSQEoKdZcuRrZPiYMju5I85L-vQjqU3nLHu3e_g4fQIyXPnCsyr3sdWrv3ijKSZ-oGTRiRKhEpZbd_5ns08_5IYinKc6omqNpY041ga8C9wQtrQXcRhAs4DeB0GF1cWBwOgN9dH6XQgr9Yv-xas12Ki0Nr8artTh5XZ_ym9xaCixcfwxgCuMh6QHdGdx5mv32KPlcvxfI12e7Wm-Vim9SckpAwZoyQStZaKyW10Jw0DHijJScVyZiqsqwhQhFtKOWCKQkSDKsI5FKJVPEperpyB9d_j-BDeexHZ-PLkmVpzjMpuIiu-dVVu957B6YcXHvS7lxSUl6yLP9lyX8AF01oaA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2548357636</pqid></control><display><type>article</type><title>Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering</title><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>MDPI - Multidisciplinary Digital Publishing Institute</source><source>Alma/SFX Local Collection</source><creator>Wang, Wei-Kai ; Liu, Kuo-Feng ; Tsai, Pi-Chuen ; Xu, Yi-Jie ; Huang, Shih-Yung</creator><creatorcontrib>Wang, Wei-Kai ; Liu, Kuo-Feng ; Tsai, Pi-Chuen ; Xu, Yi-Jie ; Huang, Shih-Yung</creatorcontrib><description>Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the grown ZnGa2O4 thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900 °C. Excess Ga released from ZnGa2O4 during thermal annealing treatment resulted in the appearance of a Ga2O3 phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa2O4 (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa2O4 thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa2O4 thin film improved at higher annealing temperatures.</description><identifier>ISSN: 2079-6412</identifier><identifier>EISSN: 2079-6412</identifier><identifier>DOI: 10.3390/coatings9120859</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Annealing ; Crystal structure ; Crystallinity ; Crystallites ; Crystallography ; Gallium oxides ; Heat treatment ; Image analysis ; Image resolution ; Image transmission ; Lattice strain ; Magnetic properties ; Magnetron sputtering ; Optical properties ; Radio frequency ; Research methodology ; Sapphire ; Scanning electron microscopy ; Single crystals ; Substrates ; Temperature ; Thin films</subject><ispartof>Coatings (Basel), 2019, Vol.9 (12), p.859</ispartof><rights>2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c310t-22ff6797caa997a6a30d2e3da730b0529b55d0690af1136297e7ef2b0e8796493</citedby><cites>FETCH-LOGICAL-c310t-22ff6797caa997a6a30d2e3da730b0529b55d0690af1136297e7ef2b0e8796493</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,4010,27904,27905,27906</link.rule.ids></links><search><creatorcontrib>Wang, Wei-Kai</creatorcontrib><creatorcontrib>Liu, Kuo-Feng</creatorcontrib><creatorcontrib>Tsai, Pi-Chuen</creatorcontrib><creatorcontrib>Xu, Yi-Jie</creatorcontrib><creatorcontrib>Huang, Shih-Yung</creatorcontrib><title>Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering</title><title>Coatings (Basel)</title><description>Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the grown ZnGa2O4 thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900 °C. Excess Ga released from ZnGa2O4 during thermal annealing treatment resulted in the appearance of a Ga2O3 phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa2O4 (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa2O4 thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa2O4 thin film improved at higher annealing temperatures.</description><subject>Annealing</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>Crystallites</subject><subject>Crystallography</subject><subject>Gallium oxides</subject><subject>Heat treatment</subject><subject>Image analysis</subject><subject>Image resolution</subject><subject>Image transmission</subject><subject>Lattice strain</subject><subject>Magnetic properties</subject><subject>Magnetron sputtering</subject><subject>Optical properties</subject><subject>Radio frequency</subject><subject>Research methodology</subject><subject>Sapphire</subject><subject>Scanning electron microscopy</subject><subject>Single crystals</subject><subject>Substrates</subject><subject>Temperature</subject><subject>Thin films</subject><issn>2079-6412</issn><issn>2079-6412</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpdkL1rwzAQxUVpoSHN3FXQ2Y0-bMkaQ2jSQEoKdZcuRrZPiYMju5I85L-vQjqU3nLHu3e_g4fQIyXPnCsyr3sdWrv3ijKSZ-oGTRiRKhEpZbd_5ns08_5IYinKc6omqNpY041ga8C9wQtrQXcRhAs4DeB0GF1cWBwOgN9dH6XQgr9Yv-xas12Ki0Nr8artTh5XZ_ym9xaCixcfwxgCuMh6QHdGdx5mv32KPlcvxfI12e7Wm-Vim9SckpAwZoyQStZaKyW10Jw0DHijJScVyZiqsqwhQhFtKOWCKQkSDKsI5FKJVPEperpyB9d_j-BDeexHZ-PLkmVpzjMpuIiu-dVVu957B6YcXHvS7lxSUl6yLP9lyX8AF01oaA</recordid><startdate>2019</startdate><enddate>2019</enddate><creator>Wang, Wei-Kai</creator><creator>Liu, Kuo-Feng</creator><creator>Tsai, Pi-Chuen</creator><creator>Xu, Yi-Jie</creator><creator>Huang, Shih-Yung</creator><general>MDPI AG</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope></search><sort><creationdate>2019</creationdate><title>Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering</title><author>Wang, Wei-Kai ; Liu, Kuo-Feng ; Tsai, Pi-Chuen ; Xu, Yi-Jie ; Huang, Shih-Yung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c310t-22ff6797caa997a6a30d2e3da730b0529b55d0690af1136297e7ef2b0e8796493</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Annealing</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>Crystallites</topic><topic>Crystallography</topic><topic>Gallium oxides</topic><topic>Heat treatment</topic><topic>Image analysis</topic><topic>Image resolution</topic><topic>Image transmission</topic><topic>Lattice strain</topic><topic>Magnetic properties</topic><topic>Magnetron sputtering</topic><topic>Optical properties</topic><topic>Radio frequency</topic><topic>Research methodology</topic><topic>Sapphire</topic><topic>Scanning electron microscopy</topic><topic>Single crystals</topic><topic>Substrates</topic><topic>Temperature</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Wei-Kai</creatorcontrib><creatorcontrib>Liu, Kuo-Feng</creatorcontrib><creatorcontrib>Tsai, Pi-Chuen</creatorcontrib><creatorcontrib>Xu, Yi-Jie</creatorcontrib><creatorcontrib>Huang, Shih-Yung</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>Coatings (Basel)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Wei-Kai</au><au>Liu, Kuo-Feng</au><au>Tsai, Pi-Chuen</au><au>Xu, Yi-Jie</au><au>Huang, Shih-Yung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering</atitle><jtitle>Coatings (Basel)</jtitle><date>2019</date><risdate>2019</risdate><volume>9</volume><issue>12</issue><spage>859</spage><pages>859-</pages><issn>2079-6412</issn><eissn>2079-6412</eissn><abstract>Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the grown ZnGa2O4 thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900 °C. Excess Ga released from ZnGa2O4 during thermal annealing treatment resulted in the appearance of a Ga2O3 phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa2O4 (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa2O4 thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa2O4 thin film improved at higher annealing temperatures.</abstract><cop>Basel</cop><pub>MDPI AG</pub><doi>10.3390/coatings9120859</doi><oa>free_for_read</oa></addata></record> |
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| source | Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; MDPI - Multidisciplinary Digital Publishing Institute; Alma/SFX Local Collection |
| subjects | Annealing Crystal structure Crystallinity Crystallites Crystallography Gallium oxides Heat treatment Image analysis Image resolution Image transmission Lattice strain Magnetic properties Magnetron sputtering Optical properties Radio frequency Research methodology Sapphire Scanning electron microscopy Single crystals Substrates Temperature Thin films |
| title | Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering |
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