Bismuth sulphide decorated ZnO nanorods heterostructure assembly via controlled SILAR cationic concentration for enhanced photoelectrochemical cells

The current study investigates Bi2S3 thin films coated on ZnO NRAs with varying cationic concentrations through ionic layer adsorption and reaction (SILAR) technique. XRD patterns reveal that Bi2S3 is successfully synthesised and exhibits orthorhombic structure on the wurtzite ZnO NRAs. The band gap...

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Veröffentlicht in:	Materials research express 2020-02, Vol.7 (2), p.25510
Hauptverfasser:	AL-Zahrani, A A, Zainal, Z, Talib, Z A, Lim, H N, Holi, A M
Format:	Artikel
Sprache:	eng
Schlagworte:	Bi2S3 Bismuth sulfides Cations Doppler effect Energy gap heterostructure Heterostructures Nanorods Optical properties photoconversion efficiency Photoelectric effect Photoelectric emission photoelectrochemical cells Photoelectrochemical devices Quantum efficiency Red shift SILAR method Thin films Wurtzite Zinc oxide ZnO NRAs
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