An Online Junction Temperature Monitoring Method for SiC MOSFETs Based on a Novel Gate Conduction Model

Junction temperature monitoring is the basis of high reliability for silicon carbide (SiC) devices since thermal stress is the dominating aging factor. Due to the high switching frequency, conventional thermal-sensitive electrical parameter (TSEP) methods have poor monitoring performance for SiC MOS...

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Veröffentlicht in:	IEEE transactions on power electronics 2021-10, Vol.36 (10), p.11087-11096
Hauptverfasser:	Zhang, Qinghao, Zhang, Pinjia
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuits Conduction heating Conduction model Electronic devices Junction temperature Junctions Logic gates Mathematical model Measurement methods metal–oxide–semiconductor field-effect transistor (MOSFET) Monitoring MOSFET MOSFETs online monitoring Parameter sensitivity reliability Silicon carbide silicon carbide (SiC) device Temperature measurement Thermal stress
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