Development of a wurtzite (Al,Ti)N thermistor on a resin substrate with high heat resistance
We developed a thin-film nitride thermistor on a resin substrate with high heat resistance by focusing on the interface between the polyimide (PI) substrate and (Al,Ti)N film. Heat resistance properties of nitride thermistors are degraded by an amorphous oxynitride layer on the PI substrate that for...
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| Veröffentlicht in: | Journal of the Ceramic Society of Japan 2021/07/01, Vol.129(7), pp.355-358 |
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| container_end_page | 358 |
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| container_issue | 7 |
| container_start_page | 355 |
| container_title | Journal of the Ceramic Society of Japan |
| container_volume | 129 |
| creator | SUZUKI, Shunpei FUJITA, Toshiaki HOSOKAWA, Yusuke FUJIWARA, Kazutaka NAGATOMO, Noriaki |
| description | We developed a thin-film nitride thermistor on a resin substrate with high heat resistance by focusing on the interface between the polyimide (PI) substrate and (Al,Ti)N film. Heat resistance properties of nitride thermistors are degraded by an amorphous oxynitride layer on the PI substrate that forms during the initial stage of sputtering. We propose the introduction of an inorganic insulating underlayer at the interface between (Al,Ti)N and the PI substrate to prevent the formation of the amorphous phase. As a result, highly crystalline (Al,Ti)N was grown directly on an inorganic insulating underlayer and high heat resistance was achieved. |
| doi_str_mv | 10.2109/jcersj2.20224 |
| format | Article |
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Heat resistance properties of nitride thermistors are degraded by an amorphous oxynitride layer on the PI substrate that forms during the initial stage of sputtering. We propose the introduction of an inorganic insulating underlayer at the interface between (Al,Ti)N and the PI substrate to prevent the formation of the amorphous phase. As a result, highly crystalline (Al,Ti)N was grown directly on an inorganic insulating underlayer and high heat resistance was achieved.</description><identifier>ISSN: 1882-0743</identifier><identifier>EISSN: 1348-6535</identifier><identifier>DOI: 10.2109/jcersj2.20224</identifier><language>eng</language><publisher>Tokyo: The Ceramic Society of Japan</publisher><subject>Aluminum ; Heat resistance ; High heat resistance ; Laminated structure ; Nitrides ; NTC thermistor ; Polyimide resins ; Reactive sputtering ; Substrates ; Thermal resistance ; Thermistors ; Titanium ; Wurtzite ; Wurtzite nitride film</subject><ispartof>Journal of the Ceramic Society of Japan, 2021/07/01, Vol.129(7), pp.355-358</ispartof><rights>2021 The Ceramic Society of Japan</rights><rights>Copyright Japan Science and Technology Agency 2021</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c432t-6c0f60ed3a7e33d642f6b338371443635ab403dc880951672e359c11278bcf093</citedby><cites>FETCH-LOGICAL-c432t-6c0f60ed3a7e33d642f6b338371443635ab403dc880951672e359c11278bcf093</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,1883,27924,27925</link.rule.ids></links><search><creatorcontrib>SUZUKI, Shunpei</creatorcontrib><creatorcontrib>FUJITA, Toshiaki</creatorcontrib><creatorcontrib>HOSOKAWA, Yusuke</creatorcontrib><creatorcontrib>FUJIWARA, Kazutaka</creatorcontrib><creatorcontrib>NAGATOMO, Noriaki</creatorcontrib><title>Development of a wurtzite (Al,Ti)N thermistor on a resin substrate with high heat resistance</title><title>Journal of the Ceramic Society of Japan</title><addtitle>J. Ceram. Soc. Japan</addtitle><description>We developed a thin-film nitride thermistor on a resin substrate with high heat resistance by focusing on the interface between the polyimide (PI) substrate and (Al,Ti)N film. Heat resistance properties of nitride thermistors are degraded by an amorphous oxynitride layer on the PI substrate that forms during the initial stage of sputtering. We propose the introduction of an inorganic insulating underlayer at the interface between (Al,Ti)N and the PI substrate to prevent the formation of the amorphous phase. As a result, highly crystalline (Al,Ti)N was grown directly on an inorganic insulating underlayer and high heat resistance was achieved.</description><subject>Aluminum</subject><subject>Heat resistance</subject><subject>High heat resistance</subject><subject>Laminated structure</subject><subject>Nitrides</subject><subject>NTC thermistor</subject><subject>Polyimide resins</subject><subject>Reactive sputtering</subject><subject>Substrates</subject><subject>Thermal resistance</subject><subject>Thermistors</subject><subject>Titanium</subject><subject>Wurtzite</subject><subject>Wurtzite nitride film</subject><issn>1882-0743</issn><issn>1348-6535</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNo9kM1Lw0AQxYMoWKtH7wEvCqbu7mw2ybHU-gFFL_UmLJvtpElIk7q7sehf75qWXmYG3u_NMC8IrimZMEqyh1qjsTWbMMIYPwlGFHgaiRjiUz-nKYtIwuE8uLC2JkQwDuko-HzEb2y67QZbF3ZFqMJdb9xv5TC8nTb3y-ruLXQlmk1lXWfCrvWEQVu1oe1z64zy4K5yZVhWa19QuUG2TrUaL4OzQjUWrw59HHw8zZezl2jx_vw6my4izYG5SGhSCIIrUAkCrARnhcgBUkgo5yAgVjknsNJpSrKYioQhxJmmlCVprguSwTi42e_dmu6rR-tk3fWm9Scli3kivIeCp6I9pU1nrcFCbk21UeZHUiL_A5SHAOUQoOfne77236zxSCvjKt3gkaYsk8lQB99R16UyElv4A9NzfDw</recordid><startdate>20210701</startdate><enddate>20210701</enddate><creator>SUZUKI, Shunpei</creator><creator>FUJITA, Toshiaki</creator><creator>HOSOKAWA, Yusuke</creator><creator>FUJIWARA, Kazutaka</creator><creator>NAGATOMO, Noriaki</creator><general>The Ceramic Society of Japan</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20210701</creationdate><title>Development of a wurtzite (Al,Ti)N thermistor on a resin substrate with high heat resistance</title><author>SUZUKI, Shunpei ; FUJITA, Toshiaki ; HOSOKAWA, Yusuke ; FUJIWARA, Kazutaka ; NAGATOMO, Noriaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c432t-6c0f60ed3a7e33d642f6b338371443635ab403dc880951672e359c11278bcf093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Aluminum</topic><topic>Heat resistance</topic><topic>High heat resistance</topic><topic>Laminated structure</topic><topic>Nitrides</topic><topic>NTC thermistor</topic><topic>Polyimide resins</topic><topic>Reactive sputtering</topic><topic>Substrates</topic><topic>Thermal resistance</topic><topic>Thermistors</topic><topic>Titanium</topic><topic>Wurtzite</topic><topic>Wurtzite nitride film</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SUZUKI, Shunpei</creatorcontrib><creatorcontrib>FUJITA, Toshiaki</creatorcontrib><creatorcontrib>HOSOKAWA, Yusuke</creatorcontrib><creatorcontrib>FUJIWARA, Kazutaka</creatorcontrib><creatorcontrib>NAGATOMO, Noriaki</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the Ceramic Society of Japan</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SUZUKI, Shunpei</au><au>FUJITA, Toshiaki</au><au>HOSOKAWA, Yusuke</au><au>FUJIWARA, Kazutaka</au><au>NAGATOMO, Noriaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Development of a wurtzite (Al,Ti)N thermistor on a resin substrate with high heat resistance</atitle><jtitle>Journal of the Ceramic Society of Japan</jtitle><addtitle>J. Ceram. Soc. Japan</addtitle><date>2021-07-01</date><risdate>2021</risdate><volume>129</volume><issue>7</issue><spage>355</spage><epage>358</epage><pages>355-358</pages><artnum>20224</artnum><issn>1882-0743</issn><eissn>1348-6535</eissn><abstract>We developed a thin-film nitride thermistor on a resin substrate with high heat resistance by focusing on the interface between the polyimide (PI) substrate and (Al,Ti)N film. Heat resistance properties of nitride thermistors are degraded by an amorphous oxynitride layer on the PI substrate that forms during the initial stage of sputtering. We propose the introduction of an inorganic insulating underlayer at the interface between (Al,Ti)N and the PI substrate to prevent the formation of the amorphous phase. As a result, highly crystalline (Al,Ti)N was grown directly on an inorganic insulating underlayer and high heat resistance was achieved.</abstract><cop>Tokyo</cop><pub>The Ceramic Society of Japan</pub><doi>10.2109/jcersj2.20224</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 1882-0743 |
| ispartof | Journal of the Ceramic Society of Japan, 2021/07/01, Vol.129(7), pp.355-358 |
| issn | 1882-0743 1348-6535 |
| language | eng |
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| source | J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese |
| subjects | Aluminum Heat resistance High heat resistance Laminated structure Nitrides NTC thermistor Polyimide resins Reactive sputtering Substrates Thermal resistance Thermistors Titanium Wurtzite Wurtzite nitride film |
| title | Development of a wurtzite (Al,Ti)N thermistor on a resin substrate with high heat resistance |
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