Effect of time relaxations on the carrier heating of InAs/GaAs quantum dot semiconductor optical amplifier
Carrier temperature in InAs quantum dot (QD) optical amplifiers has been formalized theoretically by using the double‐excited states system. High current injection gives high carrier temperature and a punch in the curve appears at low current due to the ground state carrier contribution. Increasing...
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| Veröffentlicht in: | Microwave and optical technology letters 2021-09, Vol.63 (9), p.2231-2236 |
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| container_issue | 9 |
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| container_title | Microwave and optical technology letters |
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| creator | Flayyih, Ahmed H. Mohammed, Firas S. Al‐Khursan, Amin H. |
| description | Carrier temperature in InAs quantum dot (QD) optical amplifiers has been formalized theoretically by using the double‐excited states system. High current injection gives high carrier temperature and a punch in the curve appears at low current due to the ground state carrier contribution. Increasing carrier‐heating time increased carrier temperature. It is shown the slow relaxation for both the wetting layer to QD and the interdot relaxations are given high carrier temperature. Pulses with wide full width at half‐maximum give high carrier temperature since its recovery time is increased. Free carrier absorption gives a main contribution to the heat in the QD structure. |
| doi_str_mv | 10.1002/mop.32254 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2546880946</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2546880946</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2974-f551952b8c7a5024a17a8c83ab73a0e3f15ae3d02d8f58a5d33e9b161fbe7a2b3</originalsourceid><addsrcrecordid>eNp1kD1PwzAURS0EEqUw8A8sMTGk9UdcO2NVlYJUVAaYoxfHpqmSOLUdQf89KWFlutLTefdKB6F7SmaUEDZvXDfjjIn0Ak0oyVTC5IJcoglRmUhYKuU1ugnhQAjhUrIJOqytNTpiZ3GsGoO9qeEbYuXagF2L495gDd5XxuO9Ge7t5xl9aZdhvoFlwMce2tg3uHQRB9NU2rVlr6Pz2HWx0lBjaLq6skPBLbqyUAdz95dT9PG0fl89J9vd5mW13CaaZTJNrBA0E6xQWoIgLAUqQWnFoZAciOGWCjC8JKxUVigQJecmK-iC2sJIYAWfooext_Pu2JsQ84PrfTtM5oOXhVIkSxcD9ThS2rsQvLF556sG_CmnJD-rzAeV-a_KgZ2P7FdVm9P_YP66exs_fgDSKHZe</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2546880946</pqid></control><display><type>article</type><title>Effect of time relaxations on the carrier heating of InAs/GaAs quantum dot semiconductor optical amplifier</title><source>Wiley Journals</source><creator>Flayyih, Ahmed H. ; Mohammed, Firas S. ; Al‐Khursan, Amin H.</creator><creatorcontrib>Flayyih, Ahmed H. ; Mohammed, Firas S. ; Al‐Khursan, Amin H.</creatorcontrib><description>Carrier temperature in InAs quantum dot (QD) optical amplifiers has been formalized theoretically by using the double‐excited states system. High current injection gives high carrier temperature and a punch in the curve appears at low current due to the ground state carrier contribution. Increasing carrier‐heating time increased carrier temperature. It is shown the slow relaxation for both the wetting layer to QD and the interdot relaxations are given high carrier temperature. Pulses with wide full width at half‐maximum give high carrier temperature since its recovery time is increased. Free carrier absorption gives a main contribution to the heat in the QD structure.</description><identifier>ISSN: 0895-2477</identifier><identifier>EISSN: 1098-2760</identifier><identifier>DOI: 10.1002/mop.32254</identifier><language>eng</language><publisher>Hoboken, USA: John Wiley & Sons, Inc</publisher><subject>Current carriers ; Current injection ; Heating ; Indium arsenides ; Light amplifiers ; Low currents ; quantum dot ; Quantum dots ; Recovery time ; reservoir carrier temperature ; semiconductor optical amplifier ; Semiconductor optical amplifiers ; Wetting</subject><ispartof>Microwave and optical technology letters, 2021-09, Vol.63 (9), p.2231-2236</ispartof><rights>2020 Wiley Periodicals, Inc.</rights><rights>2021 Wiley Periodicals LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2974-f551952b8c7a5024a17a8c83ab73a0e3f15ae3d02d8f58a5d33e9b161fbe7a2b3</citedby><cites>FETCH-LOGICAL-c2974-f551952b8c7a5024a17a8c83ab73a0e3f15ae3d02d8f58a5d33e9b161fbe7a2b3</cites><orcidid>0000-0003-1240-1920 ; 0000-0001-5063-2821</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fmop.32254$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fmop.32254$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Flayyih, Ahmed H.</creatorcontrib><creatorcontrib>Mohammed, Firas S.</creatorcontrib><creatorcontrib>Al‐Khursan, Amin H.</creatorcontrib><title>Effect of time relaxations on the carrier heating of InAs/GaAs quantum dot semiconductor optical amplifier</title><title>Microwave and optical technology letters</title><description>Carrier temperature in InAs quantum dot (QD) optical amplifiers has been formalized theoretically by using the double‐excited states system. High current injection gives high carrier temperature and a punch in the curve appears at low current due to the ground state carrier contribution. Increasing carrier‐heating time increased carrier temperature. It is shown the slow relaxation for both the wetting layer to QD and the interdot relaxations are given high carrier temperature. Pulses with wide full width at half‐maximum give high carrier temperature since its recovery time is increased. Free carrier absorption gives a main contribution to the heat in the QD structure.</description><subject>Current carriers</subject><subject>Current injection</subject><subject>Heating</subject><subject>Indium arsenides</subject><subject>Light amplifiers</subject><subject>Low currents</subject><subject>quantum dot</subject><subject>Quantum dots</subject><subject>Recovery time</subject><subject>reservoir carrier temperature</subject><subject>semiconductor optical amplifier</subject><subject>Semiconductor optical amplifiers</subject><subject>Wetting</subject><issn>0895-2477</issn><issn>1098-2760</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kD1PwzAURS0EEqUw8A8sMTGk9UdcO2NVlYJUVAaYoxfHpqmSOLUdQf89KWFlutLTefdKB6F7SmaUEDZvXDfjjIn0Ak0oyVTC5IJcoglRmUhYKuU1ugnhQAjhUrIJOqytNTpiZ3GsGoO9qeEbYuXagF2L495gDd5XxuO9Ge7t5xl9aZdhvoFlwMce2tg3uHQRB9NU2rVlr6Pz2HWx0lBjaLq6skPBLbqyUAdz95dT9PG0fl89J9vd5mW13CaaZTJNrBA0E6xQWoIgLAUqQWnFoZAciOGWCjC8JKxUVigQJecmK-iC2sJIYAWfooext_Pu2JsQ84PrfTtM5oOXhVIkSxcD9ThS2rsQvLF556sG_CmnJD-rzAeV-a_KgZ2P7FdVm9P_YP66exs_fgDSKHZe</recordid><startdate>202109</startdate><enddate>202109</enddate><creator>Flayyih, Ahmed H.</creator><creator>Mohammed, Firas S.</creator><creator>Al‐Khursan, Amin H.</creator><general>John Wiley & Sons, Inc</general><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1240-1920</orcidid><orcidid>https://orcid.org/0000-0001-5063-2821</orcidid></search><sort><creationdate>202109</creationdate><title>Effect of time relaxations on the carrier heating of InAs/GaAs quantum dot semiconductor optical amplifier</title><author>Flayyih, Ahmed H. ; Mohammed, Firas S. ; Al‐Khursan, Amin H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2974-f551952b8c7a5024a17a8c83ab73a0e3f15ae3d02d8f58a5d33e9b161fbe7a2b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Current carriers</topic><topic>Current injection</topic><topic>Heating</topic><topic>Indium arsenides</topic><topic>Light amplifiers</topic><topic>Low currents</topic><topic>quantum dot</topic><topic>Quantum dots</topic><topic>Recovery time</topic><topic>reservoir carrier temperature</topic><topic>semiconductor optical amplifier</topic><topic>Semiconductor optical amplifiers</topic><topic>Wetting</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Flayyih, Ahmed H.</creatorcontrib><creatorcontrib>Mohammed, Firas S.</creatorcontrib><creatorcontrib>Al‐Khursan, Amin H.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microwave and optical technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Flayyih, Ahmed H.</au><au>Mohammed, Firas S.</au><au>Al‐Khursan, Amin H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of time relaxations on the carrier heating of InAs/GaAs quantum dot semiconductor optical amplifier</atitle><jtitle>Microwave and optical technology letters</jtitle><date>2021-09</date><risdate>2021</risdate><volume>63</volume><issue>9</issue><spage>2231</spage><epage>2236</epage><pages>2231-2236</pages><issn>0895-2477</issn><eissn>1098-2760</eissn><abstract>Carrier temperature in InAs quantum dot (QD) optical amplifiers has been formalized theoretically by using the double‐excited states system. High current injection gives high carrier temperature and a punch in the curve appears at low current due to the ground state carrier contribution. Increasing carrier‐heating time increased carrier temperature. It is shown the slow relaxation for both the wetting layer to QD and the interdot relaxations are given high carrier temperature. Pulses with wide full width at half‐maximum give high carrier temperature since its recovery time is increased. Free carrier absorption gives a main contribution to the heat in the QD structure.</abstract><cop>Hoboken, USA</cop><pub>John Wiley & Sons, Inc</pub><doi>10.1002/mop.32254</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-1240-1920</orcidid><orcidid>https://orcid.org/0000-0001-5063-2821</orcidid></addata></record> |
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| language | eng |
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| subjects | Current carriers Current injection Heating Indium arsenides Light amplifiers Low currents quantum dot Quantum dots Recovery time reservoir carrier temperature semiconductor optical amplifier Semiconductor optical amplifiers Wetting |
| title | Effect of time relaxations on the carrier heating of InAs/GaAs quantum dot semiconductor optical amplifier |
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