Boron and barium incorporation at the 4H-SiC/SiO2 interface using a laser multi-charged ion source

A laser multicharged ion source was used to perform interfacial treatment of the 4H-SiC/ SiO 2 interface using B and Ba ions. A Q-switched Nd:YAG laser (wavelength λ  = 1064 nm, pulse width τ  = 7 ns, and fluence F  = 135 J/cm 2 ) was used to ablate B and Ba targets to generate multicharged ions. Th...

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