Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor

This paper presents an analytical model of AlGaN/GaN MOS-HEMT based pH sensor for the first time to determine pH of different electrolyte solutions. Gouy-chapman stern model has been used to calculate the surface charge density. The results obtained using analytical model have been verified and show...

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Veröffentlicht in:	IEEE sensors journal 2021-06, Vol.21 (12), p.12998-13005
Hauptverfasser:	Pal, Praveen, Pratap, Yogesh, Gupta, Mridula, Kabra, Sneha
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN barrier Aluminum gallium nitride Aluminum gallium nitrides Barrier layers Charge density Electrolytes Gallium nitrides HEMTs High electron mobility transistors Logic gates Mathematical models MODFETs MOS-HEMT pH sensor Sensitivity Sensors Surface charge Thickness Threshold voltage Wide band gap semiconductors
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