Effect of film thickness on morphological, structural and electrical properties of InAlN thin layers grown on glass at room temperature
In 2008, the alloy aluminum indium nitride, InAlN, was postulated as an excellent candidate to form high-efficiency solar cells. Therefore, the study of physical properties of this ternary alloy on transparent substrates is of paramount importance. In the present research, layers of different thickn...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2021-06, Vol.127 (6), Article 479 |
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| creator | Mulcue, L. F. de la Cruz, W. Saldarriaga, W. |
| description | In 2008, the alloy aluminum indium nitride, InAlN, was postulated as an excellent candidate to form high-efficiency solar cells. Therefore, the study of physical properties of this ternary alloy on transparent substrates is of paramount importance. In the present research, layers of different thickness of In
0.63
Al
0.37
N were synthesized using the technique of DC magnetron sputtering on glass substrates. The thickness of the InAlN layers obtained was 37 nm, 80 nm, 130 nm, 235 nm and 320 nm. The structural and morphological analysis shows polycrystalline films whose grain size and roughness vary depending on the thickness of the layer. Measurements using Hall effect showed that the density of free carriers exhibits a behavior quite similar to grain size. In general, the behavior of the properties can be attributed to the polycrystalline structure of In
x
Al
1-x
N films, which represents an interesting aspect for its future use in solar cells. |
| doi_str_mv | 10.1007/s00339-021-04618-2 |
| format | Article |
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0.63
Al
0.37
N were synthesized using the technique of DC magnetron sputtering on glass substrates. The thickness of the InAlN layers obtained was 37 nm, 80 nm, 130 nm, 235 nm and 320 nm. The structural and morphological analysis shows polycrystalline films whose grain size and roughness vary depending on the thickness of the layer. Measurements using Hall effect showed that the density of free carriers exhibits a behavior quite similar to grain size. In general, the behavior of the properties can be attributed to the polycrystalline structure of In
x
Al
1-x
N films, which represents an interesting aspect for its future use in solar cells.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-021-04618-2</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Aluminum ; Applied physics ; Carrier density ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Electrical properties ; Film thickness ; Glass substrates ; Grain size ; Hall effect ; Indium nitride ; Machines ; Magnetron sputtering ; Manufacturing ; Materials science ; Morphology ; Nanotechnology ; Optical and Electronic Materials ; Photovoltaic cells ; Physical properties ; Physics ; Physics and Astronomy ; Polycrystals ; Processes ; Room temperature ; Solar cells ; Surfaces and Interfaces ; Ternary alloys ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2021-06, Vol.127 (6), Article 479</ispartof><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c249t-506e4553ff84d1efa682404fdb1672fb694db820f549a4adc0b74e96e8cbeeea3</citedby><cites>FETCH-LOGICAL-c249t-506e4553ff84d1efa682404fdb1672fb694db820f549a4adc0b74e96e8cbeeea3</cites><orcidid>0000-0003-1815-4123</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-021-04618-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-021-04618-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Mulcue, L. F.</creatorcontrib><creatorcontrib>de la Cruz, W.</creatorcontrib><creatorcontrib>Saldarriaga, W.</creatorcontrib><title>Effect of film thickness on morphological, structural and electrical properties of InAlN thin layers grown on glass at room temperature</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>In 2008, the alloy aluminum indium nitride, InAlN, was postulated as an excellent candidate to form high-efficiency solar cells. Therefore, the study of physical properties of this ternary alloy on transparent substrates is of paramount importance. In the present research, layers of different thickness of In
0.63
Al
0.37
N were synthesized using the technique of DC magnetron sputtering on glass substrates. The thickness of the InAlN layers obtained was 37 nm, 80 nm, 130 nm, 235 nm and 320 nm. The structural and morphological analysis shows polycrystalline films whose grain size and roughness vary depending on the thickness of the layer. Measurements using Hall effect showed that the density of free carriers exhibits a behavior quite similar to grain size. In general, the behavior of the properties can be attributed to the polycrystalline structure of In
x
Al
1-x
N films, which represents an interesting aspect for its future use in solar cells.</description><subject>Aluminum</subject><subject>Applied physics</subject><subject>Carrier density</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Electrical properties</subject><subject>Film thickness</subject><subject>Glass substrates</subject><subject>Grain size</subject><subject>Hall effect</subject><subject>Indium nitride</subject><subject>Machines</subject><subject>Magnetron sputtering</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Morphology</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Photovoltaic cells</subject><subject>Physical properties</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Polycrystals</subject><subject>Processes</subject><subject>Room temperature</subject><subject>Solar cells</subject><subject>Surfaces and Interfaces</subject><subject>Ternary alloys</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kLFOwzAURS0EEqXwA0yWWAk4tpM4Y1UVqFTBArPlJM9pihMHOxHqF_DbOASJjbd4ePecZ12ErmNyFxOS3XtCGMsjQuOI8DQWET1Bi5gzGpGUkVO0IDnPIsHy9BxdeH8gYTilC_S10RrKAVuNdWNaPOyb8r0D77HtcGtdv7fG1k2pzC32gxvLYXTKYNVVGEwA3bTCvbM9uKEBP4m23co8T6YOG3UE53Ht7Gc3GWujgloN2FkbjkEbMBWUcInOtDIern7fJXp72Lyun6Ldy-N2vdpFJeX5ECUkBZ4kTGvBqxi0SgXlhOuqiNOM6iLNeVUISnTCc8VVVZIi45CnIMoCABRbopvZG778MYIf5MGOrgsnJU1YIjKRZyKk6JwqnfXegZa9a1rljjImcipczoXLULj8KVzSALEZ8iHc1eD-1P9Q3wzkhns</recordid><startdate>20210601</startdate><enddate>20210601</enddate><creator>Mulcue, L. F.</creator><creator>de la Cruz, W.</creator><creator>Saldarriaga, W.</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-1815-4123</orcidid></search><sort><creationdate>20210601</creationdate><title>Effect of film thickness on morphological, structural and electrical properties of InAlN thin layers grown on glass at room temperature</title><author>Mulcue, L. F. ; de la Cruz, W. ; Saldarriaga, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c249t-506e4553ff84d1efa682404fdb1672fb694db820f549a4adc0b74e96e8cbeeea3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Aluminum</topic><topic>Applied physics</topic><topic>Carrier density</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Electrical properties</topic><topic>Film thickness</topic><topic>Glass substrates</topic><topic>Grain size</topic><topic>Hall effect</topic><topic>Indium nitride</topic><topic>Machines</topic><topic>Magnetron sputtering</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Morphology</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Photovoltaic cells</topic><topic>Physical properties</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Polycrystals</topic><topic>Processes</topic><topic>Room temperature</topic><topic>Solar cells</topic><topic>Surfaces and Interfaces</topic><topic>Ternary alloys</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mulcue, L. F.</creatorcontrib><creatorcontrib>de la Cruz, W.</creatorcontrib><creatorcontrib>Saldarriaga, W.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mulcue, L. F.</au><au>de la Cruz, W.</au><au>Saldarriaga, W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of film thickness on morphological, structural and electrical properties of InAlN thin layers grown on glass at room temperature</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2021-06-01</date><risdate>2021</risdate><volume>127</volume><issue>6</issue><artnum>479</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>In 2008, the alloy aluminum indium nitride, InAlN, was postulated as an excellent candidate to form high-efficiency solar cells. Therefore, the study of physical properties of this ternary alloy on transparent substrates is of paramount importance. In the present research, layers of different thickness of In
0.63
Al
0.37
N were synthesized using the technique of DC magnetron sputtering on glass substrates. The thickness of the InAlN layers obtained was 37 nm, 80 nm, 130 nm, 235 nm and 320 nm. The structural and morphological analysis shows polycrystalline films whose grain size and roughness vary depending on the thickness of the layer. Measurements using Hall effect showed that the density of free carriers exhibits a behavior quite similar to grain size. In general, the behavior of the properties can be attributed to the polycrystalline structure of In
x
Al
1-x
N films, which represents an interesting aspect for its future use in solar cells.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-021-04618-2</doi><orcidid>https://orcid.org/0000-0003-1815-4123</orcidid></addata></record> |
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| subjects | Aluminum Applied physics Carrier density Characterization and Evaluation of Materials Condensed Matter Physics Electrical properties Film thickness Glass substrates Grain size Hall effect Indium nitride Machines Magnetron sputtering Manufacturing Materials science Morphology Nanotechnology Optical and Electronic Materials Photovoltaic cells Physical properties Physics Physics and Astronomy Polycrystals Processes Room temperature Solar cells Surfaces and Interfaces Ternary alloys Thin Films |
| title | Effect of film thickness on morphological, structural and electrical properties of InAlN thin layers grown on glass at room temperature |
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