Insight of mechanical and morphological properties of ALD- Al2O3 films in point of structural properties
Aluminum oxide (Al 2 O 3 ) has revealed many applications in diverse areas from optoelectronic devices to passivation according to its some physical, chemical, and mechanical properties. So, this paper focuses on the effect of structural changes on film properties in the point of post-annealing temp...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2021-06, Vol.127 (6), Article 460 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Nalcaci, Burak Polat Gonullu, Meryem |
| description | Aluminum oxide (Al
2
O
3
) has revealed many applications in diverse areas from optoelectronic devices to passivation according to its some physical, chemical, and mechanical properties. So, this paper focuses on the effect of structural changes on film properties in the point of post-annealing temperatures. Films have been growth by atomic layer deposition technique at 200 °C on p-type Si substrates. Following that post-annealing process has been implemented in argon gas flow in the temperatures range from 700 to 1100 °C for 5 h. The variation of the crystallographic structure has been investigated by X-ray diffraction method. The microstructural alterations of alumina films have been displayed by scanning electron microscopy and elemental compositions have been obtained by energy-dispersive X-ray spectroscopy. Surface morphologies of the films have been determined by atomic force microscopy. Furthermore, mechanical properties have been investigated by nanoindentation. Results showed that post-annealing temperatures have critical influences on the formation and transformations of different phases (
γ
,
θ
,
α
), interdiffusion between the Si substrate and Al
2
O
3
thin films, mechanical properties, and surface roughness of Al
2
O
3
thin films. |
| doi_str_mv | 10.1007/s00339-021-04601-x |
| format | Article |
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2
O
3
) has revealed many applications in diverse areas from optoelectronic devices to passivation according to its some physical, chemical, and mechanical properties. So, this paper focuses on the effect of structural changes on film properties in the point of post-annealing temperatures. Films have been growth by atomic layer deposition technique at 200 °C on p-type Si substrates. Following that post-annealing process has been implemented in argon gas flow in the temperatures range from 700 to 1100 °C for 5 h. The variation of the crystallographic structure has been investigated by X-ray diffraction method. The microstructural alterations of alumina films have been displayed by scanning electron microscopy and elemental compositions have been obtained by energy-dispersive X-ray spectroscopy. Surface morphologies of the films have been determined by atomic force microscopy. Furthermore, mechanical properties have been investigated by nanoindentation. Results showed that post-annealing temperatures have critical influences on the formation and transformations of different phases (
γ
,
θ
,
α
), interdiffusion between the Si substrate and Al
2
O
3
thin films, mechanical properties, and surface roughness of Al
2
O
3
thin films.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-021-04601-x</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Aluminum oxide ; Annealing ; Applied physics ; Argon ; Atomic force microscopy ; Atomic layer epitaxy ; Atomic properties ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Crystal structure ; Crystallography ; Gas flow ; Interdiffusion ; Machines ; Manufacturing ; Materials science ; Mechanical properties ; Microscopy ; Morphology ; Nanoindentation ; Nanotechnology ; Optical and Electronic Materials ; Optoelectronic devices ; Physics ; Physics and Astronomy ; Processes ; Silicon substrates ; Surface roughness ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2021-06, Vol.127 (6), Article 460</ispartof><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-5043b7e696a3b5eb67c381a316cf5ea82ed3477fe77bf80f4048f239c92778b83</citedby><cites>FETCH-LOGICAL-c319t-5043b7e696a3b5eb67c381a316cf5ea82ed3477fe77bf80f4048f239c92778b83</cites><orcidid>0000-0002-3919-7061</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-021-04601-x$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-021-04601-x$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Nalcaci, Burak</creatorcontrib><creatorcontrib>Polat Gonullu, Meryem</creatorcontrib><title>Insight of mechanical and morphological properties of ALD- Al2O3 films in point of structural properties</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>Aluminum oxide (Al
2
O
3
) has revealed many applications in diverse areas from optoelectronic devices to passivation according to its some physical, chemical, and mechanical properties. So, this paper focuses on the effect of structural changes on film properties in the point of post-annealing temperatures. Films have been growth by atomic layer deposition technique at 200 °C on p-type Si substrates. Following that post-annealing process has been implemented in argon gas flow in the temperatures range from 700 to 1100 °C for 5 h. The variation of the crystallographic structure has been investigated by X-ray diffraction method. The microstructural alterations of alumina films have been displayed by scanning electron microscopy and elemental compositions have been obtained by energy-dispersive X-ray spectroscopy. Surface morphologies of the films have been determined by atomic force microscopy. Furthermore, mechanical properties have been investigated by nanoindentation. Results showed that post-annealing temperatures have critical influences on the formation and transformations of different phases (
γ
,
θ
,
α
), interdiffusion between the Si substrate and Al
2
O
3
thin films, mechanical properties, and surface roughness of Al
2
O
3
thin films.</description><subject>Aluminum oxide</subject><subject>Annealing</subject><subject>Applied physics</subject><subject>Argon</subject><subject>Atomic force microscopy</subject><subject>Atomic layer epitaxy</subject><subject>Atomic properties</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Crystal structure</subject><subject>Crystallography</subject><subject>Gas flow</subject><subject>Interdiffusion</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Mechanical properties</subject><subject>Microscopy</subject><subject>Morphology</subject><subject>Nanoindentation</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronic devices</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Silicon substrates</subject><subject>Surface roughness</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKt_wFPAczTJZJPNsdRPKPSi55BNk-6W_TLZQv33bruCeHEuA8PzvAMvQreM3jNK1UOiFEATyhmhQlJGDmdoxgRwQiXQczSjWiiSg5aX6CqlHR1HcD5D5Vubqm054C7gxrvStpWzNbbtBjdd7Muu7ranSx-73seh8umILlaPBC9qvgYcqrpJuGpx31XtKScNce-GffxjXaOLYOvkb372HH08P70vX8lq_fK2XKyIA6YHklEBhfJSSwtF5gupHOTMApMuZN7m3G9AKBW8UkXIaRBU5IGDdporlRc5zNHdlDu-_tz7NJhdt4_t-NLwDEBJpmU2UnyiXOxSij6YPlaNjV-GUXNs1EyNmrFRc2rUHEYJJimNcLv18Tf6H-sbg3J5lg</recordid><startdate>20210601</startdate><enddate>20210601</enddate><creator>Nalcaci, Burak</creator><creator>Polat Gonullu, Meryem</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-3919-7061</orcidid></search><sort><creationdate>20210601</creationdate><title>Insight of mechanical and morphological properties of ALD- Al2O3 films in point of structural properties</title><author>Nalcaci, Burak ; Polat Gonullu, Meryem</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-5043b7e696a3b5eb67c381a316cf5ea82ed3477fe77bf80f4048f239c92778b83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Aluminum oxide</topic><topic>Annealing</topic><topic>Applied physics</topic><topic>Argon</topic><topic>Atomic force microscopy</topic><topic>Atomic layer epitaxy</topic><topic>Atomic properties</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Crystal structure</topic><topic>Crystallography</topic><topic>Gas flow</topic><topic>Interdiffusion</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Mechanical properties</topic><topic>Microscopy</topic><topic>Morphology</topic><topic>Nanoindentation</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Optoelectronic devices</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Silicon substrates</topic><topic>Surface roughness</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nalcaci, Burak</creatorcontrib><creatorcontrib>Polat Gonullu, Meryem</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nalcaci, Burak</au><au>Polat Gonullu, Meryem</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Insight of mechanical and morphological properties of ALD- Al2O3 films in point of structural properties</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2021-06-01</date><risdate>2021</risdate><volume>127</volume><issue>6</issue><artnum>460</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>Aluminum oxide (Al
2
O
3
) has revealed many applications in diverse areas from optoelectronic devices to passivation according to its some physical, chemical, and mechanical properties. So, this paper focuses on the effect of structural changes on film properties in the point of post-annealing temperatures. Films have been growth by atomic layer deposition technique at 200 °C on p-type Si substrates. Following that post-annealing process has been implemented in argon gas flow in the temperatures range from 700 to 1100 °C for 5 h. The variation of the crystallographic structure has been investigated by X-ray diffraction method. The microstructural alterations of alumina films have been displayed by scanning electron microscopy and elemental compositions have been obtained by energy-dispersive X-ray spectroscopy. Surface morphologies of the films have been determined by atomic force microscopy. Furthermore, mechanical properties have been investigated by nanoindentation. Results showed that post-annealing temperatures have critical influences on the formation and transformations of different phases (
γ
,
θ
,
α
), interdiffusion between the Si substrate and Al
2
O
3
thin films, mechanical properties, and surface roughness of Al
2
O
3
thin films.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-021-04601-x</doi><orcidid>https://orcid.org/0000-0002-3919-7061</orcidid></addata></record> |
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| language | eng |
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| subjects | Aluminum oxide Annealing Applied physics Argon Atomic force microscopy Atomic layer epitaxy Atomic properties Characterization and Evaluation of Materials Condensed Matter Physics Crystal structure Crystallography Gas flow Interdiffusion Machines Manufacturing Materials science Mechanical properties Microscopy Morphology Nanoindentation Nanotechnology Optical and Electronic Materials Optoelectronic devices Physics Physics and Astronomy Processes Silicon substrates Surface roughness Surfaces and Interfaces Thin Films |
| title | Insight of mechanical and morphological properties of ALD- Al2O3 films in point of structural properties |
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