Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by...

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Veröffentlicht in:	Coatings (Basel) 2021-05, Vol.11 (5), p.510
Hauptverfasser:	Pan, Yongqiang, Liu, Huan, Wang, Zhuoman, Jia, Jinmei, Zhao, Jijie
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Dielectric properties Film thickness Gas flow Linear arrays Microstructure Nitrous oxide Organic chemicals Photoelectrons Plasma enhanced chemical vapor deposition Power supply Pressure effects Radio frequency Refractivity Scanning electron microscopy Silicon dioxide Silicon nitride Statistical analysis Stoichiometry Substrates Thin films X ray photoelectron spectroscopy
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