Hydrogen Behavior in Top Gate Amorphous In-Ga-Zn-O Device Fabrication Process During Gate Insulator Deposition and Gate Insulator Etching
The hydrogen behavior in the amorphous In-Ga-Zn-O (a-IGZO) thin-film layer according to the device process with top gate structure was quantitatively investigated. The hydrogen quantities in the a-IGZO thin-film layer with gate insulator (w/GI) and after GI dry-etching were increased by 3.40\times...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 2021-06, Vol.68 (6), p.2723-2728 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2728 |
|---|---|
| container_issue | 6 |
| container_start_page | 2723 |
| container_title | IEEE transactions on electron devices |
| container_volume | 68 |
| creator | Song, Aeran Hong, Hyun Min Son, Kyoung Seok Lim, Jun Hyung Chung, Kwun-Bum |
| description | The hydrogen behavior in the amorphous In-Ga-Zn-O (a-IGZO) thin-film layer according to the device process with top gate structure was quantitatively investigated. The hydrogen quantities in the a-IGZO thin-film layer with gate insulator (w/GI) and after GI dry-etching were increased by 3.40\times 10^{20} and 2.50\times 10^{\vphantom {D^{a}}20} /cm 3 , respectively, in comparison with without GI (w/o GI). In addition, the calculated carrier concentration of the a-IGZO thin-film layer by band alignment increased by 1.60\times 10^{18} and 7.38\times 10^{17}/cm^{3} , respectively, compared with w/o GI. Due to the plasma effect, the hydrogen quantity and the calculated carrier concentration in the a-IGZO thin-film layer after GI dry-etching slightly decreased from w/GI by 0.90 \times 10^{20} and 8.62 \times 10^{17} /cm 3 , respectively. The increased hydrogen quantity in the a-IGZO thin-film layer can contribute to increase in carrier concentration by providing free electrons through the hydrogen reaction with oxygen ions or transition of hydrogen state. Here, we attempted to correlate the hydrogen effect to the increase of the carrier concentration through various physical analysis. |
| doi_str_mv | 10.1109/TED.2021.3074120 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_2530114461</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9419709</ieee_id><sourcerecordid>2530114461</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-4749a15cdf63526b6e6ba13179c20a0d9e0f3c04ef0e744fcc617129dc6083983</originalsourceid><addsrcrecordid>eNpdkMFqGzEQhkVoIG6Se6AXQc_rzkharXVMY8cxBNKDc8llkbWztkwibaVdgx8hb91NHXroaRjm-_-Bj7EbhCkimB_rxXwqQOBUQqVQwBmbYFlWhdFKf2ETAJwVRs7kBfua835ctVJiwt4fjk2KWwr8J-3swcfEfeDr2PGl7YnfvsXU7eKQ-SoUS1u8hOKJz-ngHfF7u0ne2d7HwH-l6ChnPh-SD9tTdhXy8Gr7sXFOXcz-L2hD8_910bvdGLpi5619zXT9OS_Z8_1iffdQPD4tV3e3j4UTBvtCVcpYLF3TalkKvdGkNxYlVsYJsNAYglY6UNQCVUq1zmmsUJjGaZhJM5OX7Pupt0vx90C5r_dxSGF8WYtSAqJSGkcKTpRLMedEbd0l_2bTsUaoP4TXo_D6Q3j9KXyMfDtFPBH9w41CU4GRfwBgLHwE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2530114461</pqid></control><display><type>article</type><title>Hydrogen Behavior in Top Gate Amorphous In-Ga-Zn-O Device Fabrication Process During Gate Insulator Deposition and Gate Insulator Etching</title><source>IEEE Electronic Library Online</source><creator>Song, Aeran ; Hong, Hyun Min ; Son, Kyoung Seok ; Lim, Jun Hyung ; Chung, Kwun-Bum</creator><creatorcontrib>Song, Aeran ; Hong, Hyun Min ; Son, Kyoung Seok ; Lim, Jun Hyung ; Chung, Kwun-Bum</creatorcontrib><description><![CDATA[The hydrogen behavior in the amorphous In-Ga-Zn-O (a-IGZO) thin-film layer according to the device process with top gate structure was quantitatively investigated. The hydrogen quantities in the a-IGZO thin-film layer with gate insulator (w/GI) and after GI dry-etching were increased by <inline-formula> <tex-math notation="LaTeX">3.40\times 10^{20} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">2.50\times 10^{\vphantom {D^{a}}20} </tex-math></inline-formula>/cm 3 , respectively, in comparison with without GI (w/o GI). In addition, the calculated carrier concentration of the a-IGZO thin-film layer by band alignment increased by <inline-formula> <tex-math notation="LaTeX">1.60\times 10^{18} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">7.38\times 10^{17}/cm^{3} </tex-math></inline-formula>, respectively, compared with w/o GI. Due to the plasma effect, the hydrogen quantity and the calculated carrier concentration in the a-IGZO thin-film layer after GI dry-etching slightly decreased from w/GI by <inline-formula> <tex-math notation="LaTeX">0.90 \times 10^{20} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">8.62 \times 10^{17} </tex-math></inline-formula>/cm 3 , respectively. The increased hydrogen quantity in the a-IGZO thin-film layer can contribute to increase in carrier concentration by providing free electrons through the hydrogen reaction with oxygen ions or transition of hydrogen state. Here, we attempted to correlate the hydrogen effect to the increase of the carrier concentration through various physical analysis.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2021.3074120</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amorphous In–Ga–Zn–O (a-IGZO) ; band alignment ; Bonding ; Carrier density ; elastic recoil detection (ERD) ; Etching ; Free electrons ; gate insulator (GI) ; Hydrogen ; hydrogen behavior ; Indium gallium zinc oxide ; Insulators ; Ions ; Logic gates ; Mathematical analysis ; Oxygen ions ; Silicon compounds ; Thin film transistors</subject><ispartof>IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2723-2728</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-4749a15cdf63526b6e6ba13179c20a0d9e0f3c04ef0e744fcc617129dc6083983</citedby><cites>FETCH-LOGICAL-c291t-4749a15cdf63526b6e6ba13179c20a0d9e0f3c04ef0e744fcc617129dc6083983</cites><orcidid>0000-0001-8877-5297</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9419709$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9419709$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Song, Aeran</creatorcontrib><creatorcontrib>Hong, Hyun Min</creatorcontrib><creatorcontrib>Son, Kyoung Seok</creatorcontrib><creatorcontrib>Lim, Jun Hyung</creatorcontrib><creatorcontrib>Chung, Kwun-Bum</creatorcontrib><title>Hydrogen Behavior in Top Gate Amorphous In-Ga-Zn-O Device Fabrication Process During Gate Insulator Deposition and Gate Insulator Etching</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[The hydrogen behavior in the amorphous In-Ga-Zn-O (a-IGZO) thin-film layer according to the device process with top gate structure was quantitatively investigated. The hydrogen quantities in the a-IGZO thin-film layer with gate insulator (w/GI) and after GI dry-etching were increased by <inline-formula> <tex-math notation="LaTeX">3.40\times 10^{20} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">2.50\times 10^{\vphantom {D^{a}}20} </tex-math></inline-formula>/cm 3 , respectively, in comparison with without GI (w/o GI). In addition, the calculated carrier concentration of the a-IGZO thin-film layer by band alignment increased by <inline-formula> <tex-math notation="LaTeX">1.60\times 10^{18} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">7.38\times 10^{17}/cm^{3} </tex-math></inline-formula>, respectively, compared with w/o GI. Due to the plasma effect, the hydrogen quantity and the calculated carrier concentration in the a-IGZO thin-film layer after GI dry-etching slightly decreased from w/GI by <inline-formula> <tex-math notation="LaTeX">0.90 \times 10^{20} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">8.62 \times 10^{17} </tex-math></inline-formula>/cm 3 , respectively. The increased hydrogen quantity in the a-IGZO thin-film layer can contribute to increase in carrier concentration by providing free electrons through the hydrogen reaction with oxygen ions or transition of hydrogen state. Here, we attempted to correlate the hydrogen effect to the increase of the carrier concentration through various physical analysis.]]></description><subject>Amorphous In–Ga–Zn–O (a-IGZO)</subject><subject>band alignment</subject><subject>Bonding</subject><subject>Carrier density</subject><subject>elastic recoil detection (ERD)</subject><subject>Etching</subject><subject>Free electrons</subject><subject>gate insulator (GI)</subject><subject>Hydrogen</subject><subject>hydrogen behavior</subject><subject>Indium gallium zinc oxide</subject><subject>Insulators</subject><subject>Ions</subject><subject>Logic gates</subject><subject>Mathematical analysis</subject><subject>Oxygen ions</subject><subject>Silicon compounds</subject><subject>Thin film transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkMFqGzEQhkVoIG6Se6AXQc_rzkharXVMY8cxBNKDc8llkbWztkwibaVdgx8hb91NHXroaRjm-_-Bj7EbhCkimB_rxXwqQOBUQqVQwBmbYFlWhdFKf2ETAJwVRs7kBfua835ctVJiwt4fjk2KWwr8J-3swcfEfeDr2PGl7YnfvsXU7eKQ-SoUS1u8hOKJz-ngHfF7u0ne2d7HwH-l6ChnPh-SD9tTdhXy8Gr7sXFOXcz-L2hD8_910bvdGLpi5619zXT9OS_Z8_1iffdQPD4tV3e3j4UTBvtCVcpYLF3TalkKvdGkNxYlVsYJsNAYglY6UNQCVUq1zmmsUJjGaZhJM5OX7Pupt0vx90C5r_dxSGF8WYtSAqJSGkcKTpRLMedEbd0l_2bTsUaoP4TXo_D6Q3j9KXyMfDtFPBH9w41CU4GRfwBgLHwE</recordid><startdate>20210601</startdate><enddate>20210601</enddate><creator>Song, Aeran</creator><creator>Hong, Hyun Min</creator><creator>Son, Kyoung Seok</creator><creator>Lim, Jun Hyung</creator><creator>Chung, Kwun-Bum</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8877-5297</orcidid></search><sort><creationdate>20210601</creationdate><title>Hydrogen Behavior in Top Gate Amorphous In-Ga-Zn-O Device Fabrication Process During Gate Insulator Deposition and Gate Insulator Etching</title><author>Song, Aeran ; Hong, Hyun Min ; Son, Kyoung Seok ; Lim, Jun Hyung ; Chung, Kwun-Bum</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-4749a15cdf63526b6e6ba13179c20a0d9e0f3c04ef0e744fcc617129dc6083983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Amorphous In–Ga–Zn–O (a-IGZO)</topic><topic>band alignment</topic><topic>Bonding</topic><topic>Carrier density</topic><topic>elastic recoil detection (ERD)</topic><topic>Etching</topic><topic>Free electrons</topic><topic>gate insulator (GI)</topic><topic>Hydrogen</topic><topic>hydrogen behavior</topic><topic>Indium gallium zinc oxide</topic><topic>Insulators</topic><topic>Ions</topic><topic>Logic gates</topic><topic>Mathematical analysis</topic><topic>Oxygen ions</topic><topic>Silicon compounds</topic><topic>Thin film transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Song, Aeran</creatorcontrib><creatorcontrib>Hong, Hyun Min</creatorcontrib><creatorcontrib>Son, Kyoung Seok</creatorcontrib><creatorcontrib>Lim, Jun Hyung</creatorcontrib><creatorcontrib>Chung, Kwun-Bum</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library Online</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Song, Aeran</au><au>Hong, Hyun Min</au><au>Son, Kyoung Seok</au><au>Lim, Jun Hyung</au><au>Chung, Kwun-Bum</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hydrogen Behavior in Top Gate Amorphous In-Ga-Zn-O Device Fabrication Process During Gate Insulator Deposition and Gate Insulator Etching</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2021-06-01</date><risdate>2021</risdate><volume>68</volume><issue>6</issue><spage>2723</spage><epage>2728</epage><pages>2723-2728</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[The hydrogen behavior in the amorphous In-Ga-Zn-O (a-IGZO) thin-film layer according to the device process with top gate structure was quantitatively investigated. The hydrogen quantities in the a-IGZO thin-film layer with gate insulator (w/GI) and after GI dry-etching were increased by <inline-formula> <tex-math notation="LaTeX">3.40\times 10^{20} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">2.50\times 10^{\vphantom {D^{a}}20} </tex-math></inline-formula>/cm 3 , respectively, in comparison with without GI (w/o GI). In addition, the calculated carrier concentration of the a-IGZO thin-film layer by band alignment increased by <inline-formula> <tex-math notation="LaTeX">1.60\times 10^{18} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">7.38\times 10^{17}/cm^{3} </tex-math></inline-formula>, respectively, compared with w/o GI. Due to the plasma effect, the hydrogen quantity and the calculated carrier concentration in the a-IGZO thin-film layer after GI dry-etching slightly decreased from w/GI by <inline-formula> <tex-math notation="LaTeX">0.90 \times 10^{20} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">8.62 \times 10^{17} </tex-math></inline-formula>/cm 3 , respectively. The increased hydrogen quantity in the a-IGZO thin-film layer can contribute to increase in carrier concentration by providing free electrons through the hydrogen reaction with oxygen ions or transition of hydrogen state. Here, we attempted to correlate the hydrogen effect to the increase of the carrier concentration through various physical analysis.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2021.3074120</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-8877-5297</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2723-2728 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_journals_2530114461 |
| source | IEEE Electronic Library Online |
| subjects | Amorphous In–Ga–Zn–O (a-IGZO) band alignment Bonding Carrier density elastic recoil detection (ERD) Etching Free electrons gate insulator (GI) Hydrogen hydrogen behavior Indium gallium zinc oxide Insulators Ions Logic gates Mathematical analysis Oxygen ions Silicon compounds Thin film transistors |
| title | Hydrogen Behavior in Top Gate Amorphous In-Ga-Zn-O Device Fabrication Process During Gate Insulator Deposition and Gate Insulator Etching |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T17%3A48%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Hydrogen%20Behavior%20in%20Top%20Gate%20Amorphous%20In-Ga-Zn-O%20Device%20Fabrication%20Process%20During%20Gate%20Insulator%20Deposition%20and%20Gate%20Insulator%20Etching&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Song,%20Aeran&rft.date=2021-06-01&rft.volume=68&rft.issue=6&rft.spage=2723&rft.epage=2728&rft.pages=2723-2728&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2021.3074120&rft_dat=%3Cproquest_RIE%3E2530114461%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2530114461&rft_id=info:pmid/&rft_ieee_id=9419709&rfr_iscdi=true |