Enhancing Detectivity of Indium-Oxide-Based Photodetectors via Vertical Nanostructuring Through Glancing Angle Deposition

In 2 O 3 vertical nanostructures (VNS) are fabricated using a glancing angle deposition (GLAD) technique upon an In 2 O 3 thin film (TF) on a n-type silicon (n-Si) substrate. Analysis using high-resolution transmission electron microscopy (HRTEM) and high-resolution x-ray diffraction (HRXRD) reveale...

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Veröffentlicht in:	Journal of electronic materials 2021-06, Vol.50 (6), p.3722-3730
Hauptverfasser:	Nath, Amitabha, Mahajan, Bikram Kishore, Singh, Laishram Robindro, Vishwas, Shubhajit, Nanda, Rajib Kumar, Sarkar, Mitra Barun
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Depletion Deposition Electronics and Microelectronics High resolution High resolution electron microscopy Indium Indium oxides Instrumentation Materials Science Optical and Electronic Materials Original Research Article Photosensitivity Silicon substrates Solid State Physics Thin films Transmission electron microscopy
Online-Zugang:	Volltext
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