Charge Trapping and Transconductance Degradation in Irradiated 3-D Sequentially Integrated FDSOI MOSFETs
Total-ionizing-dose (TID) effects are compared in 1) conventional high-temperature processed planar fully-depleted silicon-on-insulator (FD-SOI) p-channel MOSFETs, 2) 3-D sequentially integrated (3DSI) FD-SOI MOSFETs in the bottom layer with additional thermal budget and process flows due to the cre...
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science 2021-05, Vol.68 (5), p.707-715 |
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| creator | Toguchi, Shintaro Zhang, En Xia Fleetwood, Daniel M. Schrimpf, Ronald D. Reed, Robert A. Moreau, Stephane Cheramy, Severine Batude, Perrine Brunet, Laurent Andrieu, Francois Alles, Michael L. |
| description | Total-ionizing-dose (TID) effects are compared in 1) conventional high-temperature processed planar fully-depleted silicon-on-insulator (FD-SOI) p-channel MOSFETs, 2) 3-D sequentially integrated (3DSI) FD-SOI MOSFETs in the bottom layer with additional thermal budget and process flows due to the creation of the top layer, and 3) 3DSI low-temperature-processed FD-SOI MOSFETs in the top layer. When irradiated under worst case negative bias, 3DSI bottom-isolated transistors show significantly enhanced charge trapping and transconductance degradation than planar devices. The enhanced degradation for bottom-isolated devices is attributed primarily to increased interface- and border-trap formation at the buried oxide (BOX)/Si interface and/or lateral charge nonuniformities in the BOX. The radiation-induced transconductance degradation in top-isolated devices is attributed to the increased resistance of the portion of the channel that underlies the source/drain spacers. |
| doi_str_mv | 10.1109/TNS.2021.3059999 |
| format | Article |
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When irradiated under worst case negative bias, 3DSI bottom-isolated transistors show significantly enhanced charge trapping and transconductance degradation than planar devices. The enhanced degradation for bottom-isolated devices is attributed primarily to increased interface- and border-trap formation at the buried oxide (BOX)/Si interface and/or lateral charge nonuniformities in the BOX. The radiation-induced transconductance degradation in top-isolated devices is attributed to the increased resistance of the portion of the channel that underlies the source/drain spacers.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2021.3059999</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>3-D integration ; Degradation ; Engineering Sciences ; fully depleted (FD) ; Hafnium oxide ; High temperature ; irradiation ; Low temperature ; MOSFETs ; Radiation ; Radiation effects ; radiation-induced short channel effects ; series resistance ; Silicon ; Silicon compounds ; Silicon germanium ; silicon-on-insulator (SOI) ; SOI (semiconductors) ; Three-dimensional displays ; Tin ; total ionizing dose (TID) ; Transconductance ; Transistors ; Trapping</subject><ispartof>IEEE Transactions on Nuclear Science, 2021-05, Vol.68 (5), p.707-715</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-4191f41df80c5d70d098b5a131662f76e34b7891853ad192ed0265ec75b7a9043</citedby><cites>FETCH-LOGICAL-c325t-4191f41df80c5d70d098b5a131662f76e34b7891853ad192ed0265ec75b7a9043</cites><orcidid>0000-0001-9303-9980 ; 0000-0003-4257-7142 ; 0000-0001-7419-2701 ; 0000-0002-1473-5572 ; 0000-0001-6120-8313 ; 0000-0001-6104-2050 ; 0000-0002-8021-2411</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9357481$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,776,780,792,881,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9357481$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://cea.hal.science/cea-04521778$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Toguchi, Shintaro</creatorcontrib><creatorcontrib>Zhang, En Xia</creatorcontrib><creatorcontrib>Fleetwood, Daniel M.</creatorcontrib><creatorcontrib>Schrimpf, Ronald D.</creatorcontrib><creatorcontrib>Reed, Robert A.</creatorcontrib><creatorcontrib>Moreau, Stephane</creatorcontrib><creatorcontrib>Cheramy, Severine</creatorcontrib><creatorcontrib>Batude, Perrine</creatorcontrib><creatorcontrib>Brunet, Laurent</creatorcontrib><creatorcontrib>Andrieu, Francois</creatorcontrib><creatorcontrib>Alles, Michael L.</creatorcontrib><title>Charge Trapping and Transconductance Degradation in Irradiated 3-D Sequentially Integrated FDSOI MOSFETs</title><title>IEEE Transactions on Nuclear Science</title><addtitle>TNS</addtitle><description>Total-ionizing-dose (TID) effects are compared in 1) conventional high-temperature processed planar fully-depleted silicon-on-insulator (FD-SOI) p-channel MOSFETs, 2) 3-D sequentially integrated (3DSI) FD-SOI MOSFETs in the bottom layer with additional thermal budget and process flows due to the creation of the top layer, and 3) 3DSI low-temperature-processed FD-SOI MOSFETs in the top layer. When irradiated under worst case negative bias, 3DSI bottom-isolated transistors show significantly enhanced charge trapping and transconductance degradation than planar devices. The enhanced degradation for bottom-isolated devices is attributed primarily to increased interface- and border-trap formation at the buried oxide (BOX)/Si interface and/or lateral charge nonuniformities in the BOX. The radiation-induced transconductance degradation in top-isolated devices is attributed to the increased resistance of the portion of the channel that underlies the source/drain spacers.</description><subject>3-D integration</subject><subject>Degradation</subject><subject>Engineering Sciences</subject><subject>fully depleted (FD)</subject><subject>Hafnium oxide</subject><subject>High temperature</subject><subject>irradiation</subject><subject>Low temperature</subject><subject>MOSFETs</subject><subject>Radiation</subject><subject>Radiation effects</subject><subject>radiation-induced short channel effects</subject><subject>series resistance</subject><subject>Silicon</subject><subject>Silicon compounds</subject><subject>Silicon germanium</subject><subject>silicon-on-insulator (SOI)</subject><subject>SOI (semiconductors)</subject><subject>Three-dimensional displays</subject><subject>Tin</subject><subject>total ionizing dose (TID)</subject><subject>Transconductance</subject><subject>Transistors</subject><subject>Trapping</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1PAjEQhhujiYjeTbw08eRhsdMP2h4JiJCgHBbPTdl2YQl2sbuY8O_tBsNcJu_MM5OZF6FHIAMAol9Xn_mAEgoDRoROcYV6IITKQEh1jXqEgMo01_oW3TXNLkkuiOih7Xhr48bjVbSHQxU22AbXidAUdXDHorWh8HjiN9E621Z1wFXA85hUZVvvMMsmOPc_Rx_ayu73JzwPbQd3vekkX87xxzKfvq2ae3RT2n3jH_5zH32l8niWLZbv8_FokRWMijbjoKHk4EpFCuEkcUSrtbDAYDikpRx6xtdSaVCCWQeaekfoUPhCirW0mnDWRy_nvVu7N4dYfdt4MrWtzGy0MIW3hnBBQUr1C4l9PrOHWKcXmtbs6mMM6TxDBVWaCyAdRc5UEeumib68rAViOu9N8t503pt_79PI03mk8t5fcM2E5ArYH14IfTk</recordid><startdate>20210501</startdate><enddate>20210501</enddate><creator>Toguchi, Shintaro</creator><creator>Zhang, En Xia</creator><creator>Fleetwood, Daniel M.</creator><creator>Schrimpf, Ronald D.</creator><creator>Reed, Robert A.</creator><creator>Moreau, Stephane</creator><creator>Cheramy, Severine</creator><creator>Batude, Perrine</creator><creator>Brunet, Laurent</creator><creator>Andrieu, Francois</creator><creator>Alles, Michael L.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Trapping and Transconductance Degradation in Irradiated 3-D Sequentially Integrated FDSOI MOSFETs</title><author>Toguchi, Shintaro ; Zhang, En Xia ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Reed, Robert A. ; Moreau, Stephane ; Cheramy, Severine ; Batude, Perrine ; Brunet, Laurent ; Andrieu, Francois ; Alles, Michael L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c325t-4191f41df80c5d70d098b5a131662f76e34b7891853ad192ed0265ec75b7a9043</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>3-D integration</topic><topic>Degradation</topic><topic>Engineering Sciences</topic><topic>fully depleted (FD)</topic><topic>Hafnium oxide</topic><topic>High temperature</topic><topic>irradiation</topic><topic>Low temperature</topic><topic>MOSFETs</topic><topic>Radiation</topic><topic>Radiation effects</topic><topic>radiation-induced short channel effects</topic><topic>series 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planar fully-depleted silicon-on-insulator (FD-SOI) p-channel MOSFETs, 2) 3-D sequentially integrated (3DSI) FD-SOI MOSFETs in the bottom layer with additional thermal budget and process flows due to the creation of the top layer, and 3) 3DSI low-temperature-processed FD-SOI MOSFETs in the top layer. When irradiated under worst case negative bias, 3DSI bottom-isolated transistors show significantly enhanced charge trapping and transconductance degradation than planar devices. The enhanced degradation for bottom-isolated devices is attributed primarily to increased interface- and border-trap formation at the buried oxide (BOX)/Si interface and/or lateral charge nonuniformities in the BOX. The radiation-induced transconductance degradation in top-isolated devices is attributed to the increased resistance of the portion of the channel that underlies the source/drain spacers.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2021.3059999</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0001-9303-9980</orcidid><orcidid>https://orcid.org/0000-0003-4257-7142</orcidid><orcidid>https://orcid.org/0000-0001-7419-2701</orcidid><orcidid>https://orcid.org/0000-0002-1473-5572</orcidid><orcidid>https://orcid.org/0000-0001-6120-8313</orcidid><orcidid>https://orcid.org/0000-0001-6104-2050</orcidid><orcidid>https://orcid.org/0000-0002-8021-2411</orcidid></addata></record> |
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| subjects | 3-D integration Degradation Engineering Sciences fully depleted (FD) Hafnium oxide High temperature irradiation Low temperature MOSFETs Radiation Radiation effects radiation-induced short channel effects series resistance Silicon Silicon compounds Silicon germanium silicon-on-insulator (SOI) SOI (semiconductors) Three-dimensional displays Tin total ionizing dose (TID) Transconductance Transistors Trapping |
| title | Charge Trapping and Transconductance Degradation in Irradiated 3-D Sequentially Integrated FDSOI MOSFETs |
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