Parametrization of a Microwave and the Noise Model of a Metamorphic 0.15 µm MHET InAlAs/InGaAs Transistor

AlGaAs MHEMT transistors are studied in the microwave frequency range with a gate length of 0.15 μm. It is found that the discrepancy between the experimental and theoretically calculated, within the model, S -parameters does not exceed 0.5% in the frequency range from 1 to 30 GHz. The static charac...

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Veröffentlicht in:	Russian microelectronics 2021-05, Vol.50 (3), p.170-177
Hauptverfasser:	Gorelov, A. A., Lokotko, V. V., Kargin, N. I., Vasilievsky, I. S., Grishakov, K. S., Ryzhuk, R. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Electrical Engineering Engineering Frequency ranges Indium gallium arsenides Inductance Microwave frequencies Noise Noise reduction Parameterization Parasitics (electronics) Semiconductor devices Static characteristics Transistors
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