Hafnium Oxide‐Based Ferroelectric Devices for Computing‐in‐Memory Applications

Herein, a layer of 10 nm ferroelectric Al‐doped HfO2 (HAO) film is fabricated and optimized and is further integrated in a nonvolatile memory device with TiN/HAO/Pt/Ti capacitor structure. Long retention, high endurance, and stable storage characteristics, as well as a competitive residual polarizat...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2021-05, Vol.218 (9), p.n/a
Hauptverfasser:	Chen, Pei-Yao, He, Zheng-Yu, Cha, Ming-Yang, Liu, Hao, Zhu, Hao, Chen, Lin, Sun, Qing-Qing, Ding, Shi-Jin, Zhang, David Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	aluminum-doped HfO2 Boolean algebra Computation computing-in-memory Data storage ferroelectric Ferroelectric materials Ferroelectricity Hafnium oxide Logic circuits Memory devices Memristors nonvolatile Polarization
Online-Zugang:	Volltext
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