Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

High-efficiency InGaN-based yellow light-emitting diodes (LEDs) with high brightness are desirable for future high-resolution displays and lighting products. Here, we demonstrate efficient InGaN-based yellow (∼570 nm) LEDs with optimized three-layer staggered quantum wells (QWs) that are grown on pa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2021-05, Vol.118 (18)
Hauptverfasser:	Zhao, Xiaoyu, Tang, Bin, Gong, Liyan, Bai, Junchun, Ping, Jiafeng, Zhou, Shengjun
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Indium gallium nitrides Injection current Light emitting diodes Mapping Photoluminescence Quantum efficiency Quantum wells Sapphire Spectroscopy Spectrum analysis Substrates Transmission electron microscopy Wave functions
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!