Sign inversion phenomenon of voltage-induced tunnel magnetocapacitance
Tunnel magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) has recently attracted interest due to unique properties, such as large magnetic response, thermal stability, and robustness to the bias voltage. In this Letter, we report the sign inversion phenomenon of TMC observed with frequency...
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| Veröffentlicht in: | Applied physics letters 2021-05, Vol.118 (18) |
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| container_title | Applied physics letters |
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| creator | Nakagawa, Takeru Ogata, Kentaro Nakayama, Yusuke Xiao, Gang Kaiju, Hideo |
| description | Tunnel magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) has recently attracted interest due to unique properties, such as large magnetic response, thermal stability, and robustness to the bias voltage. In this Letter, we report the sign inversion phenomenon of TMC observed with frequency modulation and dc voltage application to MgO-based MTJs at room temperature. A negative TMC is observed in the frequency region of about kHz due to the appearance of spin capacitance. By applying a dc voltage (a few hundred mV) in this frequency region, the spin flip is promoted in the parallel configuration of MTJs. This results in the observation of the sign inversion of TMC from negative to positive. These physical pictures can be well explained by the calculation based on the modified Debye-Fröhlich model. Our research offers a deeper understanding of AC spin transports, DC spin accumulation, equilibrium and non-equilibrium spin dynamics. |
| doi_str_mv | 10.1063/5.0050304 |
| format | Article |
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In this Letter, we report the sign inversion phenomenon of TMC observed with frequency modulation and dc voltage application to MgO-based MTJs at room temperature. A negative TMC is observed in the frequency region of about kHz due to the appearance of spin capacitance. By applying a dc voltage (a few hundred mV) in this frequency region, the spin flip is promoted in the parallel configuration of MTJs. This results in the observation of the sign inversion of TMC from negative to positive. These physical pictures can be well explained by the calculation based on the modified Debye-Fröhlich model. 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Our research offers a deeper understanding of AC spin transports, DC spin accumulation, equilibrium and non-equilibrium spin dynamics.</description><subject>Applied physics</subject><subject>Electric potential</subject><subject>Frequency modulation</subject><subject>Magnetic properties</subject><subject>Room temperature</subject><subject>Spin dynamics</subject><subject>Thermal stability</subject><subject>Tunnel junctions</subject><subject>Voltage</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqd0MFKAzEQBuAgCtbqwTdY8KSwOpNsks1RilWh4EE9hzSbrVvaZE2yBd_eLS149zAMAx8zzE_INcI9gmAP_B6AA4PqhEwQpCwZYn1KJgDASqE4npOLlNbjyCljEzJ_71a-6PzOxdQFX_RfzoftWL4IbbELm2xWrux8M1jXFHnw3m2KrVl5l4M1vbFdNt66S3LWmk1yV8c-JZ_zp4_ZS7l4e36dPS5Ky-o6l1yJCigoirwW0hpXN5LXnAnlpEJKQTRLNMaB4goBli0aq7islWUVdy1jU3Jz2NvH8D24lPU6DNGPJzXlFKXASuKobg_KxpBSdK3uY7c18Ucj6H1MmutjTKO9O9i0fyWPGfwP70L8g7pvWvYLhQ90iA</recordid><startdate>20210503</startdate><enddate>20210503</enddate><creator>Nakagawa, Takeru</creator><creator>Ogata, Kentaro</creator><creator>Nakayama, Yusuke</creator><creator>Xiao, Gang</creator><creator>Kaiju, Hideo</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5485-3661</orcidid><orcidid>https://orcid.org/0000-0002-3440-3946</orcidid></search><sort><creationdate>20210503</creationdate><title>Sign inversion phenomenon of voltage-induced tunnel magnetocapacitance</title><author>Nakagawa, Takeru ; Ogata, Kentaro ; Nakayama, Yusuke ; Xiao, Gang ; Kaiju, Hideo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c388t-59640209215867cae8d7585369e7912206db1aae0959100bf1ac95789c345ef33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Applied physics</topic><topic>Electric potential</topic><topic>Frequency modulation</topic><topic>Magnetic properties</topic><topic>Room temperature</topic><topic>Spin dynamics</topic><topic>Thermal stability</topic><topic>Tunnel junctions</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakagawa, Takeru</creatorcontrib><creatorcontrib>Ogata, Kentaro</creatorcontrib><creatorcontrib>Nakayama, Yusuke</creatorcontrib><creatorcontrib>Xiao, Gang</creatorcontrib><creatorcontrib>Kaiju, Hideo</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakagawa, Takeru</au><au>Ogata, Kentaro</au><au>Nakayama, Yusuke</au><au>Xiao, Gang</au><au>Kaiju, Hideo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sign inversion phenomenon of voltage-induced tunnel magnetocapacitance</atitle><jtitle>Applied physics letters</jtitle><date>2021-05-03</date><risdate>2021</risdate><volume>118</volume><issue>18</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Tunnel magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) has recently attracted interest due to unique properties, such as large magnetic response, thermal stability, and robustness to the bias voltage. In this Letter, we report the sign inversion phenomenon of TMC observed with frequency modulation and dc voltage application to MgO-based MTJs at room temperature. A negative TMC is observed in the frequency region of about kHz due to the appearance of spin capacitance. By applying a dc voltage (a few hundred mV) in this frequency region, the spin flip is promoted in the parallel configuration of MTJs. This results in the observation of the sign inversion of TMC from negative to positive. These physical pictures can be well explained by the calculation based on the modified Debye-Fröhlich model. 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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Electric potential Frequency modulation Magnetic properties Room temperature Spin dynamics Thermal stability Tunnel junctions Voltage |
| title | Sign inversion phenomenon of voltage-induced tunnel magnetocapacitance |
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