Carrier transport mechanism associated with the thickness of the absorbing layer in GaAs-based blocked‐impurity‐band (BIB) far‐infrared detectors

Carrier transport mechanism associated with the thickness of the absorbing layer in GaAs-based blocked-impurity-band (BIB) far-infrared detector has been investigated in detail. It is found that responsivity linearly increases with the increased thickness of absorbing layer first, and after achievin...

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Veröffentlicht in:	Optical and quantum electronics 2021-05, Vol.53 (5), Article 250
Hauptverfasser:	Wang, Xiaodong, Ma, Weiyi, Chen, Yulu, Chen, Xiaoyao, Wang, Bingbing, Zhang, Chuansheng, Zhang, Haoxing
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier mobility Carrier transport Characterization and Evaluation of Materials Computer Communication Networks Electric fields Electrical Engineering Far infrared radiation Impurities Infrared detectors Lasers Numerical Simulation of Optoelectronic Devices 2020 Optical Devices Optics Photonics Physics Physics and Astronomy Thickness Transport phenomena
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