Arrayed MoS2–In0.53Ga0.47As van der Waals Heterostructure for High‐Speed and Broadband Detection from Visible to Shortwave‐Infrared Light

A high‐speed and broadband 5 × 5 photodetector array based on MoS2/In0.53Ga0.47As heterojunction is successfully demonstrated to take full advantage of the type‐II band‐aligned multilayer MoS2/In0.53Ga0.47As. The fabricated devices exhibit good uniformity in the Raman spectrum and clear rectifying characteristics. The fabricated MoS2/In0.53Ga0.47As photodetectors show good optical performances at a broad wavelength range showing high responsivities corresponding to the detectivity of ≈1010 Jones at −3 V for the incident broadband light from 400 to 1550 nm. A very fast photoresponse is also obtained with a small rise/fall time in the order of microseconds both for visible (638 nm) and shortwave infrared (1310 nm). Finally, the image scanning properties of MoS2/In0.53Ga0.47As devices are demonstrated for visible and infrared light, indicating that the suggested device is one of the promising options for future broadband imager, which can be integrated on the focal plane arrays (FPAs). A highly scalable, high‐speed, and broadband 5 × 5 photodetector array based on MoS2/In0.53Ga0.47As heterojunction is demonstrated. Using type‐II band alignment of MoS2/In0.53Ga0.47As heterojunction, it provides high‐speed photodetecting performance and broadband wavelength coverage from visible to shortwave infrared light, showing great potential to be used in future imaging applications such as focal plane arrays (FPAs).